VLSI technology is constantly scaling to smaller feature sizes, known as scaling. There are two main scaling factors - α which scales all linear dimensions except oxide thickness and voltage, and β which scales oxide thickness and voltage. As devices scale, their parameters like gate area, capacitance, resistance, and delay are affected. Constant field scaling keeps the electric field constant, constant voltage keeps voltage constant, and lateral scaling only reduces the gate length. Scaling improves performance and integration density but physical limits restrict how far it can go, and it increases issues like interconnect delay and crosstalk.
The document discusses low power design techniques in VLSI. It begins by explaining why low power has become important, especially with the rise of mobile devices. It then discusses the different sources of power consumption, including dynamic and static power. Several low power design techniques are covered, such as clock gating, multi-Vt libraries, multi-voltage design, and power gating. The document emphasizes analyzing power at the system level and using EDA tools to implement low power techniques throughout the design flow. Overall, it provides an overview of analyzing power consumption and the goals and methods of low power VLSI design.
DESIGN OF IMPROVED RESISTOR LESS 45NM SWITCHED INVERTER SCHEME (SIS) ANALOG T...VLSICS Design
This work presents three different approaches which eliminates the resistor ladder completely and hence
reduce the power demand drastically of a Analog to Digital Converter. The first approach is Switched
Inverter Scheme (SIS) ADC; The test result obtained for it on 45nm technology indicates an offset error of
0.014 LSB. The full scale error is of -0.112LSB. The gain error is of 0.07 LSB, actual full scale range of
0.49V, worst case DNL & INL each of -0.3V. The power dissipation for the SIS ADC is 207.987 μwatts;
Power delay product (PDP) is 415.9 fWs, and the area is 1.89μm2. The second and third approaches are
clocked SIS ADC and Sleep transistor SIS ADC. Both of them show significant improvement in power
dissipation as 57.5% & 71% respectively. Whereas PDP is 229.7 fWs and area is 0.05 μm2 for Clocked SIS
ADC and 107.3 fWs & 1.94 μm2 for Sleep transistor SIS ADC.
VLSI circuit design involves a standardized process of scaling down transistor sizes over multiple generations. This document outlines key aspects of the VLSI design process including:
1) MOSFET layers, stick diagrams, design rules and layout diagrams are used to plan and design VLSI circuits before fabrication.
2) Stick diagrams provide a simplified cartoon view of layouts showing relative placement of transistors without exact sizes or spacings.
3) Scaling down transistor dimensions according to standard scaling factors allows more transistors to fit on chips leading to improved performance over generations, but also introduces challenges like increased interconnect delays and crosstalk.
Effects of Scaling on MOS Device Performanceiosrjce
This paper presents effects on MOS transistor performance due to scaling of its dimensions. Scaling
theory deals with the change in the device characteristics with the decrease in the dimensions of a MOS
transistor. MOS transistors are continuously scaled down due to the desire for high density and high
functionality VLSI chips. The driving forces behind these developments are increasing the demand for portable
systems requiring high throughput and high integration capacity. Effects of scaling on the performance
characteristics of a MOS device are analyzed in this paper
Ch7 lecture slides Chenming Hu Device for ICChenming Hu
The document discusses technology scaling of MOSFETs used in integrated circuits. Key points include:
1) Feature sizes are reduced by around 30% with each new technology node to improve cost, speed, and power consumption.
2) Scaling challenges include increased subthreshold leakage current and threshold voltage roll-off.
3) Innovations such as high-k dielectrics, metal gates, strained silicon, and retrograde well doping help address these challenges and allow scaling to continue.
4) Variations in manufacturing must also be considered and techniques like multiple threshold voltages and supply voltages are used.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
IRJET- Design and Fabrication of a Single-Phase 1KVA Transformer with Aut...IRJET Journal
1) The document describes the design and fabrication of a 1KVA, single-phase shell type transformer with an automatic cooling system. It discusses the core and winding designs based on specifications like voltage and power ratings.
2) A temperature sensor circuit with a thermistor is used to sense the temperature. When the temperature increases above a preset level, a DC fan is automatically switched on to cool the transformer. It is switched off once the temperature decreases.
3) The transformer is designed to output two voltages - 115V and 120V from an input of 230V, without any tapping. This is achieved through appropriate winding designs based on design calculations.
VLSI technology is constantly scaling to smaller feature sizes, known as scaling. There are two main scaling factors - α which scales all linear dimensions except oxide thickness and voltage, and β which scales oxide thickness and voltage. As devices scale, their parameters like gate area, capacitance, resistance, and delay are affected. Constant field scaling keeps the electric field constant, constant voltage keeps voltage constant, and lateral scaling only reduces the gate length. Scaling improves performance and integration density but physical limits restrict how far it can go, and it increases issues like interconnect delay and crosstalk.
The document discusses low power design techniques in VLSI. It begins by explaining why low power has become important, especially with the rise of mobile devices. It then discusses the different sources of power consumption, including dynamic and static power. Several low power design techniques are covered, such as clock gating, multi-Vt libraries, multi-voltage design, and power gating. The document emphasizes analyzing power at the system level and using EDA tools to implement low power techniques throughout the design flow. Overall, it provides an overview of analyzing power consumption and the goals and methods of low power VLSI design.
DESIGN OF IMPROVED RESISTOR LESS 45NM SWITCHED INVERTER SCHEME (SIS) ANALOG T...VLSICS Design
This work presents three different approaches which eliminates the resistor ladder completely and hence
reduce the power demand drastically of a Analog to Digital Converter. The first approach is Switched
Inverter Scheme (SIS) ADC; The test result obtained for it on 45nm technology indicates an offset error of
0.014 LSB. The full scale error is of -0.112LSB. The gain error is of 0.07 LSB, actual full scale range of
0.49V, worst case DNL & INL each of -0.3V. The power dissipation for the SIS ADC is 207.987 μwatts;
Power delay product (PDP) is 415.9 fWs, and the area is 1.89μm2. The second and third approaches are
clocked SIS ADC and Sleep transistor SIS ADC. Both of them show significant improvement in power
dissipation as 57.5% & 71% respectively. Whereas PDP is 229.7 fWs and area is 0.05 μm2 for Clocked SIS
ADC and 107.3 fWs & 1.94 μm2 for Sleep transistor SIS ADC.
VLSI circuit design involves a standardized process of scaling down transistor sizes over multiple generations. This document outlines key aspects of the VLSI design process including:
1) MOSFET layers, stick diagrams, design rules and layout diagrams are used to plan and design VLSI circuits before fabrication.
2) Stick diagrams provide a simplified cartoon view of layouts showing relative placement of transistors without exact sizes or spacings.
3) Scaling down transistor dimensions according to standard scaling factors allows more transistors to fit on chips leading to improved performance over generations, but also introduces challenges like increased interconnect delays and crosstalk.
Effects of Scaling on MOS Device Performanceiosrjce
This paper presents effects on MOS transistor performance due to scaling of its dimensions. Scaling
theory deals with the change in the device characteristics with the decrease in the dimensions of a MOS
transistor. MOS transistors are continuously scaled down due to the desire for high density and high
functionality VLSI chips. The driving forces behind these developments are increasing the demand for portable
systems requiring high throughput and high integration capacity. Effects of scaling on the performance
characteristics of a MOS device are analyzed in this paper
Ch7 lecture slides Chenming Hu Device for ICChenming Hu
The document discusses technology scaling of MOSFETs used in integrated circuits. Key points include:
1) Feature sizes are reduced by around 30% with each new technology node to improve cost, speed, and power consumption.
2) Scaling challenges include increased subthreshold leakage current and threshold voltage roll-off.
3) Innovations such as high-k dielectrics, metal gates, strained silicon, and retrograde well doping help address these challenges and allow scaling to continue.
4) Variations in manufacturing must also be considered and techniques like multiple threshold voltages and supply voltages are used.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
IRJET- Design and Fabrication of a Single-Phase 1KVA Transformer with Aut...IRJET Journal
1) The document describes the design and fabrication of a 1KVA, single-phase shell type transformer with an automatic cooling system. It discusses the core and winding designs based on specifications like voltage and power ratings.
2) A temperature sensor circuit with a thermistor is used to sense the temperature. When the temperature increases above a preset level, a DC fan is automatically switched on to cool the transformer. It is switched off once the temperature decreases.
3) The transformer is designed to output two voltages - 115V and 120V from an input of 230V, without any tapping. This is achieved through appropriate winding designs based on design calculations.
This document discusses the scaling of MOS circuits. Some key points:
- Scaling involves proportionally shrinking device dimensions while maintaining electrical properties, allowing for smaller, faster devices. It has driven increased functionality, performance, and lower costs per chip according to Moore's Law.
- Figures of merit for scaling include minimum feature size, transistor count, power, frequency, die size, and cost. The International Technology Roadmap for Semiconductors guides scaling targets.
- Scaling models include full scaling with constant electrical fields, fixed voltage scaling, and general scaling. Device parameters are scaled by different factors depending on the model.
- Implications of scaling include improved performance but also interconnect delays, power dissip
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Lecture 4
18-322 Fall 2003
Textbook: Design Methodology Insert A
[Portions adapted from J. P. Uyemura “Introduction to VLSI Circuits and Systems”, Wiley 2001.]
International Journal of Computational Engineering Research (IJCER) ijceronline
International Journal of Computational Engineering Research(IJCER) is an intentional online Journal in English monthly publishing journal. This Journal publish original research work that contributes significantly to further the scientific knowledge in engineering and Technology
This document presents the design of a high performance folded cascade OTA and sample and hold circuit. The OTA is designed to achieve 10-bit resolution while operating at a 28 MHz sampling frequency. Simulation results show the OTA achieves a high open loop gain of 72 dB and bandwidth of 112 MHz, with a phase margin of 73 degrees. A low resistance transmission gate switch is designed to reduce charge injection and clock feedthrough effects during sampling. The circuit is implemented in a 130 nm CMOS technology.
design and analysis of voltage controlled oscillatorvaibhav jindal
The document describes the design of a low power consumption and low phase noise voltage controlled oscillator (VCO). It aims to implement the design of a VCO presented in a base paper in 180nm technology and then 45nm technology to achieve lower phase noise results. The key steps include designing the schematic and layout of the VCO in Cadence Virtuoso, simulating and analyzing the power consumption and phase noise, and comparing the results to the base paper. The design uses a combination of cross-coupled and balanced VCO configurations along with a LC tank circuit to minimize phase noise. Future work involves completing the 180nm and 45nm designs and analyses to optimize for lower power and noise.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
The document discusses CMOS fabrication processes and scaling. It covers the following key points in 3 sentences:
The fabrication process involves using a series of photolithography masks to define layers of the chip, including n-well, polysilicon, diffusion regions, contacts and metal. Scaling can involve either full scaling, which preserves electric fields, or constant voltage scaling, which leaves voltages unchanged but can increase power consumption. The document also discusses MOSFET capacitances including oxide capacitances between gate and other terminals and junction capacitances due to diffusion regions.
Leakage Power Reduction Techniques Revisited in a CMOS Inverter Circuit at De...idescitation
As CMOS Technology is aiming at miniaturization
of MOS devices, a trend of increase in the static power
consumption is being observed. The main sources of static
power consumption are sub-threshold current and gate oxide
leakage current. In this work, we discuss the major sources of
power consumption, various techniques to reduce leakage
power and their trade-offs in a CMOS inverter logic circuit at
90nm. Three most popular leakage current reduction
techniques are studied with respect to a conventional inverter
circuit. It is seen that the main trade-off is between the area
and the static leakage current. This paper aims to reduce the
static power dissipation with a small compromise in area.
Design, Simulation and Hardware Implementation of a Multi Device Interleaved ...IJPEDS-IAES
This paper presents the analysis and implementation of a two-phase Multi Device Interleaved Boost Converter (MDIBC). Among the various DC-DC topologies, Multi device Interleaved converter is considered as a better solution for fuel cell hybrid vehicles as it reduces the input current ripple, output voltage ripple and the size of passive components. Detailed analysis has been done to investigate the benefits of Multi device Interleaved boost converter by comparing it with the conventional Interleaved boost converter topology. Moreover, in this paper, power loss analysis (switching loss, conduction loss, inductor loss) of the proposed converter has been performed. Simulation study of Multi device interleaved converter has been studied using MATLAB/SIMULINK. Hardware prototype is built to validate the results.
This document discusses transformer design and design parameters. It covers topics such as transformer ratings, core design, insulation coordination, voltages, impedance, forces, losses, temperature limits, and cooling. Standards from organizations like IEEE, ANSI, and NEMA are also referenced. Transformer design involves selecting appropriate ratings and parameters to meet requirements while considering factors like performance, reliability, insulation, cooling, and costs.
MOS Process and Single Stage Amplifiers.pptxPrateek718260
The analog CMOS process involves over 200 steps including wafer processing, photolithography, oxidation, deposition, and etching. Wafer processing produces a high-quality silicon substrate with the proper type and level of doping. Photolithography uses masks and light to transfer circuit patterns onto layers of photoresist on the wafer. Oxidation grows a thin, uniform layer of silicon dioxide on the wafer through high-temperature reaction with oxygen, and the thickness of this oxide layer is crucial for transistor performance.
This document discusses techniques for reducing power consumption in integrated circuits and systems. It begins by providing background on technology trends that increase power needs such as rising transistor counts. It then discusses sources of power dissipation in CMOS circuits and how power is affected by voltage, frequency, capacitance, and switching activity. The document outlines a design flow for analyzing power at different levels of abstraction. It presents techniques for reducing dynamic, short-circuit, and leakage power through voltage scaling, transistor sizing, clock gating, and other methods. Architecture-level, circuit-level, and logic-level power optimization techniques are also summarized.
Power dissipation has emerged an important parameter in design of Low Power CMOS circuits. For this level
converter and dual supply voltage assignments are used to reduce the power dissipation and propagation delay.
In this paper, variable supply-voltage scheme (dual-VS scheme) for dual power supplies along with voltage
level converter is presented. Also paper presents an overall comparative analysis among various methods to
achieve voltage level shifter even in lower technology comparative to higher ones and help user to select the
best methods for same at this technology.
Parallel/flash ADCs use a voltage ladder and comparators to convert an analog input to a thermometer code. They can achieve sampling rates over 1GHz but require 2N-1 comparators. Interpolating and averaging ADCs reduce comparator count by interpolating between ladder voltages and averaging comparator outputs. Folding ADCs further reduce comparator count by mapping the input range onto a smaller set of subranges. Time-interleaved ADCs achieve high speeds by parallelizing conversions across multiple ADCs.
This document compares level 1, 2, and 3 MOSFET models in SPICE simulations. It provides background on device modeling and outlines the key equations that define each model level. Level 1 is the simplest model and does not account for short channel effects. Level 2 includes mobility degradation and threshold voltage variations. Level 3 has similar accuracy to level 2 but faster simulation time and better convergence. Drain current versus drain-source voltage characteristics are plotted to show differences between the models.
Closed Loop Control of Hybrid Boosting Converter for Renewable Energy Applica...IRJET Journal
This document presents a hybrid boosting converter used to boost input DC voltage for renewable energy applications. A closed-loop control technique for the hybrid boosting converter is proposed to achieve the required output voltage. Simulation results show the converter operation under different duty cycles, boundary conduction mode, and discontinuous conduction mode. The closed-loop control allows the converter to maintain the desired output voltage compared to open-loop control.
Design of Memory Cell for Low Power ApplicationsIJERA Editor
Aggressive CMOS scaling results in lower threshold voltage and thin oxide thickness for transistors manufactured in nano regime. As a result, reducing the sub-threshold and tunneling gate leakage currents has become crucial in the design of ICs. This paper presents a new method to reduce the total leakage power dissipation of static random access memories (SRAMs) while maintaining their performance.
A high-Speed Communication System is based on the Design of a Bi-NoC Router, ...DharmaBanothu
The Network on Chip (NoC) has emerged as an effective
solution for intercommunication infrastructure within System on
Chip (SoC) designs, overcoming the limitations of traditional
methods that face significant bottlenecks. However, the complexity
of NoC design presents numerous challenges related to
performance metrics such as scalability, latency, power
consumption, and signal integrity. This project addresses the
issues within the router's memory unit and proposes an enhanced
memory structure. To achieve efficient data transfer, FIFO buffers
are implemented in distributed RAM and virtual channels for
FPGA-based NoC. The project introduces advanced FIFO-based
memory units within the NoC router, assessing their performance
in a Bi-directional NoC (Bi-NoC) configuration. The primary
objective is to reduce the router's workload while enhancing the
FIFO internal structure. To further improve data transfer speed,
a Bi-NoC with a self-configurable intercommunication channel is
suggested. Simulation and synthesis results demonstrate
guaranteed throughput, predictable latency, and equitable
network access, showing significant improvement over previous
designs
This document discusses the scaling of MOS circuits. Some key points:
- Scaling involves proportionally shrinking device dimensions while maintaining electrical properties, allowing for smaller, faster devices. It has driven increased functionality, performance, and lower costs per chip according to Moore's Law.
- Figures of merit for scaling include minimum feature size, transistor count, power, frequency, die size, and cost. The International Technology Roadmap for Semiconductors guides scaling targets.
- Scaling models include full scaling with constant electrical fields, fixed voltage scaling, and general scaling. Device parameters are scaled by different factors depending on the model.
- Implications of scaling include improved performance but also interconnect delays, power dissip
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Lecture 4
18-322 Fall 2003
Textbook: Design Methodology Insert A
[Portions adapted from J. P. Uyemura “Introduction to VLSI Circuits and Systems”, Wiley 2001.]
International Journal of Computational Engineering Research (IJCER) ijceronline
International Journal of Computational Engineering Research(IJCER) is an intentional online Journal in English monthly publishing journal. This Journal publish original research work that contributes significantly to further the scientific knowledge in engineering and Technology
This document presents the design of a high performance folded cascade OTA and sample and hold circuit. The OTA is designed to achieve 10-bit resolution while operating at a 28 MHz sampling frequency. Simulation results show the OTA achieves a high open loop gain of 72 dB and bandwidth of 112 MHz, with a phase margin of 73 degrees. A low resistance transmission gate switch is designed to reduce charge injection and clock feedthrough effects during sampling. The circuit is implemented in a 130 nm CMOS technology.
design and analysis of voltage controlled oscillatorvaibhav jindal
The document describes the design of a low power consumption and low phase noise voltage controlled oscillator (VCO). It aims to implement the design of a VCO presented in a base paper in 180nm technology and then 45nm technology to achieve lower phase noise results. The key steps include designing the schematic and layout of the VCO in Cadence Virtuoso, simulating and analyzing the power consumption and phase noise, and comparing the results to the base paper. The design uses a combination of cross-coupled and balanced VCO configurations along with a LC tank circuit to minimize phase noise. Future work involves completing the 180nm and 45nm designs and analyses to optimize for lower power and noise.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
The document discusses CMOS fabrication processes and scaling. It covers the following key points in 3 sentences:
The fabrication process involves using a series of photolithography masks to define layers of the chip, including n-well, polysilicon, diffusion regions, contacts and metal. Scaling can involve either full scaling, which preserves electric fields, or constant voltage scaling, which leaves voltages unchanged but can increase power consumption. The document also discusses MOSFET capacitances including oxide capacitances between gate and other terminals and junction capacitances due to diffusion regions.
Leakage Power Reduction Techniques Revisited in a CMOS Inverter Circuit at De...idescitation
As CMOS Technology is aiming at miniaturization
of MOS devices, a trend of increase in the static power
consumption is being observed. The main sources of static
power consumption are sub-threshold current and gate oxide
leakage current. In this work, we discuss the major sources of
power consumption, various techniques to reduce leakage
power and their trade-offs in a CMOS inverter logic circuit at
90nm. Three most popular leakage current reduction
techniques are studied with respect to a conventional inverter
circuit. It is seen that the main trade-off is between the area
and the static leakage current. This paper aims to reduce the
static power dissipation with a small compromise in area.
Design, Simulation and Hardware Implementation of a Multi Device Interleaved ...IJPEDS-IAES
This paper presents the analysis and implementation of a two-phase Multi Device Interleaved Boost Converter (MDIBC). Among the various DC-DC topologies, Multi device Interleaved converter is considered as a better solution for fuel cell hybrid vehicles as it reduces the input current ripple, output voltage ripple and the size of passive components. Detailed analysis has been done to investigate the benefits of Multi device Interleaved boost converter by comparing it with the conventional Interleaved boost converter topology. Moreover, in this paper, power loss analysis (switching loss, conduction loss, inductor loss) of the proposed converter has been performed. Simulation study of Multi device interleaved converter has been studied using MATLAB/SIMULINK. Hardware prototype is built to validate the results.
This document discusses transformer design and design parameters. It covers topics such as transformer ratings, core design, insulation coordination, voltages, impedance, forces, losses, temperature limits, and cooling. Standards from organizations like IEEE, ANSI, and NEMA are also referenced. Transformer design involves selecting appropriate ratings and parameters to meet requirements while considering factors like performance, reliability, insulation, cooling, and costs.
MOS Process and Single Stage Amplifiers.pptxPrateek718260
The analog CMOS process involves over 200 steps including wafer processing, photolithography, oxidation, deposition, and etching. Wafer processing produces a high-quality silicon substrate with the proper type and level of doping. Photolithography uses masks and light to transfer circuit patterns onto layers of photoresist on the wafer. Oxidation grows a thin, uniform layer of silicon dioxide on the wafer through high-temperature reaction with oxygen, and the thickness of this oxide layer is crucial for transistor performance.
This document discusses techniques for reducing power consumption in integrated circuits and systems. It begins by providing background on technology trends that increase power needs such as rising transistor counts. It then discusses sources of power dissipation in CMOS circuits and how power is affected by voltage, frequency, capacitance, and switching activity. The document outlines a design flow for analyzing power at different levels of abstraction. It presents techniques for reducing dynamic, short-circuit, and leakage power through voltage scaling, transistor sizing, clock gating, and other methods. Architecture-level, circuit-level, and logic-level power optimization techniques are also summarized.
Power dissipation has emerged an important parameter in design of Low Power CMOS circuits. For this level
converter and dual supply voltage assignments are used to reduce the power dissipation and propagation delay.
In this paper, variable supply-voltage scheme (dual-VS scheme) for dual power supplies along with voltage
level converter is presented. Also paper presents an overall comparative analysis among various methods to
achieve voltage level shifter even in lower technology comparative to higher ones and help user to select the
best methods for same at this technology.
Parallel/flash ADCs use a voltage ladder and comparators to convert an analog input to a thermometer code. They can achieve sampling rates over 1GHz but require 2N-1 comparators. Interpolating and averaging ADCs reduce comparator count by interpolating between ladder voltages and averaging comparator outputs. Folding ADCs further reduce comparator count by mapping the input range onto a smaller set of subranges. Time-interleaved ADCs achieve high speeds by parallelizing conversions across multiple ADCs.
This document compares level 1, 2, and 3 MOSFET models in SPICE simulations. It provides background on device modeling and outlines the key equations that define each model level. Level 1 is the simplest model and does not account for short channel effects. Level 2 includes mobility degradation and threshold voltage variations. Level 3 has similar accuracy to level 2 but faster simulation time and better convergence. Drain current versus drain-source voltage characteristics are plotted to show differences between the models.
Closed Loop Control of Hybrid Boosting Converter for Renewable Energy Applica...IRJET Journal
This document presents a hybrid boosting converter used to boost input DC voltage for renewable energy applications. A closed-loop control technique for the hybrid boosting converter is proposed to achieve the required output voltage. Simulation results show the converter operation under different duty cycles, boundary conduction mode, and discontinuous conduction mode. The closed-loop control allows the converter to maintain the desired output voltage compared to open-loop control.
Design of Memory Cell for Low Power ApplicationsIJERA Editor
Aggressive CMOS scaling results in lower threshold voltage and thin oxide thickness for transistors manufactured in nano regime. As a result, reducing the sub-threshold and tunneling gate leakage currents has become crucial in the design of ICs. This paper presents a new method to reduce the total leakage power dissipation of static random access memories (SRAMs) while maintaining their performance.
A high-Speed Communication System is based on the Design of a Bi-NoC Router, ...DharmaBanothu
The Network on Chip (NoC) has emerged as an effective
solution for intercommunication infrastructure within System on
Chip (SoC) designs, overcoming the limitations of traditional
methods that face significant bottlenecks. However, the complexity
of NoC design presents numerous challenges related to
performance metrics such as scalability, latency, power
consumption, and signal integrity. This project addresses the
issues within the router's memory unit and proposes an enhanced
memory structure. To achieve efficient data transfer, FIFO buffers
are implemented in distributed RAM and virtual channels for
FPGA-based NoC. The project introduces advanced FIFO-based
memory units within the NoC router, assessing their performance
in a Bi-directional NoC (Bi-NoC) configuration. The primary
objective is to reduce the router's workload while enhancing the
FIFO internal structure. To further improve data transfer speed,
a Bi-NoC with a self-configurable intercommunication channel is
suggested. Simulation and synthesis results demonstrate
guaranteed throughput, predictable latency, and equitable
network access, showing significant improvement over previous
designs
Online train ticket booking system project.pdfKamal Acharya
Rail transport is one of the important modes of transport in India. Now a days we
see that there are railways that are present for the long as well as short distance
travelling which makes the life of the people easier. When compared to other
means of transport, a railway is the cheapest means of transport. The maintenance
of the railway database also plays a major role in the smooth running of this
system. The Online Train Ticket Management System will help in reserving the
tickets of the railways to travel from a particular source to the destination.
An In-Depth Exploration of Natural Language Processing: Evolution, Applicatio...DharmaBanothu
Natural language processing (NLP) has
recently garnered significant interest for the
computational representation and analysis of human
language. Its applications span multiple domains such
as machine translation, email spam detection,
information extraction, summarization, healthcare,
and question answering. This paper first delineates
four phases by examining various levels of NLP and
components of Natural Language Generation,
followed by a review of the history and progression of
NLP. Subsequently, we delve into the current state of
the art by presenting diverse NLP applications,
contemporary trends, and challenges. Finally, we
discuss some available datasets, models, and
evaluation metrics in NLP.
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3rd International Conference on Artificial Intelligence Advances (AIAD 2024)GiselleginaGloria
3rd International Conference on Artificial Intelligence Advances (AIAD 2024) will act as a major forum for the presentation of innovative ideas, approaches, developments, and research projects in the area advanced Artificial Intelligence. It will also serve to facilitate the exchange of information between researchers and industry professionals to discuss the latest issues and advancement in the research area. Core areas of AI and advanced multi-disciplinary and its applications will be covered during the conferences.
2. What is scaling:
• The process of reduction of feature size(L) and line width(W)
is called scaling.
Why scaling: Scaling leads to improved performance more
transistor on die, overall fabrication cost is reduced.
Impact of scaling is characterized in terms of several
indicators
Minimize feature size
Number of gates on one chip
Power dissipation
Maximum operational frequency
Production cost
3. Scaling models:
• Three types of scaling models are used in vlsi
Combined voltage(V) and Dimension(D)scaling model:
• We have consider two scaling factors α, β
• 1/β is the scaling factor for supply voltage (vdd) and gate
oxide thickness(tox)
• 1/ α is the scaling factor for all linear dimensions
Constant electric field model: α= β
Constant voltage scaling model: β=1
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