VLSI circuit design involves a standardized process of scaling down transistor sizes over multiple generations. This document outlines key aspects of the VLSI design process including:
1) MOSFET layers, stick diagrams, design rules and layout diagrams are used to plan and design VLSI circuits before fabrication.
2) Stick diagrams provide a simplified cartoon view of layouts showing relative placement of transistors without exact sizes or spacings.
3) Scaling down transistor dimensions according to standard scaling factors allows more transistors to fit on chips leading to improved performance over generations, but also introduces challenges like increased interconnect delays and crosstalk.
VLSI technology is constantly scaling to smaller feature sizes, known as scaling. There are two main scaling factors - α which scales all linear dimensions except oxide thickness and voltage, and β which scales oxide thickness and voltage. As devices scale, their parameters like gate area, capacitance, resistance, and delay are affected. Constant field scaling keeps the electric field constant, constant voltage keeps voltage constant, and lateral scaling only reduces the gate length. Scaling improves performance and integration density but physical limits restrict how far it can go, and it increases issues like interconnect delay and crosstalk.
Lecture 4
18-322 Fall 2003
Textbook: Design Methodology Insert A
[Portions adapted from J. P. Uyemura “Introduction to VLSI Circuits and Systems”, Wiley 2001.]
vlsi qb.docx imprtant questions for all unitsnitcse
This document contains a question bank for the course EC3352: VLSI & Chip Design. It includes questions related to MOS transistor operation, CMOS logic, layout design rules, I-V characteristics, delay modeling, scaling concepts, and CMOS fabrication processes. Key topics covered are threshold voltage, body effect, latch-up, twin tub process, SOI process, Elmore delay model, logical effort, critical paths, and layout design rules such as lambda-based rules. Sample questions assess understanding of MOSFET parameters, transfer characteristics, non-ideal effects, noise margins, rise/fall times, and stick diagrams. Layout aspects include designing a 2-input NAND gate and explaining P-well and n
This document discusses MOSFETs and CMOS technology scaling. It begins with an introduction to electronics and transistors before discussing MOSFET structure and operation. The MOSFET I-V characteristics and effects like body effect and channel length modulation are covered. The use of SPICE models to simulate MOSFET behavior is also summarized. The document then addresses challenges with scaling CMOS technology to smaller nodes and how approaches like high-k dielectrics and FinFETs helped overcome these challenges. FinFET structure and advantages over planar MOSFETs are briefly outlined.
This document discusses MOS and BiCMOS circuit design processes. It describes the layers used in MOS circuits and provides color encodings for stick diagrams. Stick diagrams capture layer information through simple diagrams and act as an interface between symbolic circuits and layouts. The document outlines the NMOS and CMOS design processes, including rules for drawing stick diagrams and placing transistors. It also covers design rules and lambda-based rules for layout dimensions and separations. Contact cuts and buried contacts are discussed for making electrical connections between layers.
Effects of Scaling on MOS Device Performanceiosrjce
This paper presents effects on MOS transistor performance due to scaling of its dimensions. Scaling
theory deals with the change in the device characteristics with the decrease in the dimensions of a MOS
transistor. MOS transistors are continuously scaled down due to the desire for high density and high
functionality VLSI chips. The driving forces behind these developments are increasing the demand for portable
systems requiring high throughput and high integration capacity. Effects of scaling on the performance
characteristics of a MOS device are analyzed in this paper
This presentation discusses the Lambda based design rules for drawing the layouts. The spacing between ltwo layers, extent if of overlap, minimum dimensions of each layer etc are decided by the lambda based design rules. the separation between metal and poly, poly and diffusion , width of metal etc
The document discusses design rules for NMOS and CMOS layouts. It introduces the concepts of stick diagrams and layout diagrams. Stick diagrams provide placement and connection details without exact dimensions, while layout diagrams include all device dimensions. Design rules specify minimum feature sizes and separations between layers to ensure proper fabrication and yield. Examples of NMOS inverters, NAND and NOR gates are presented along with their stick diagrams and transistor aspect ratios. Finally, industry standard and λ-based design rules are described.
VLSI technology is constantly scaling to smaller feature sizes, known as scaling. There are two main scaling factors - α which scales all linear dimensions except oxide thickness and voltage, and β which scales oxide thickness and voltage. As devices scale, their parameters like gate area, capacitance, resistance, and delay are affected. Constant field scaling keeps the electric field constant, constant voltage keeps voltage constant, and lateral scaling only reduces the gate length. Scaling improves performance and integration density but physical limits restrict how far it can go, and it increases issues like interconnect delay and crosstalk.
Lecture 4
18-322 Fall 2003
Textbook: Design Methodology Insert A
[Portions adapted from J. P. Uyemura “Introduction to VLSI Circuits and Systems”, Wiley 2001.]
vlsi qb.docx imprtant questions for all unitsnitcse
This document contains a question bank for the course EC3352: VLSI & Chip Design. It includes questions related to MOS transistor operation, CMOS logic, layout design rules, I-V characteristics, delay modeling, scaling concepts, and CMOS fabrication processes. Key topics covered are threshold voltage, body effect, latch-up, twin tub process, SOI process, Elmore delay model, logical effort, critical paths, and layout design rules such as lambda-based rules. Sample questions assess understanding of MOSFET parameters, transfer characteristics, non-ideal effects, noise margins, rise/fall times, and stick diagrams. Layout aspects include designing a 2-input NAND gate and explaining P-well and n
This document discusses MOSFETs and CMOS technology scaling. It begins with an introduction to electronics and transistors before discussing MOSFET structure and operation. The MOSFET I-V characteristics and effects like body effect and channel length modulation are covered. The use of SPICE models to simulate MOSFET behavior is also summarized. The document then addresses challenges with scaling CMOS technology to smaller nodes and how approaches like high-k dielectrics and FinFETs helped overcome these challenges. FinFET structure and advantages over planar MOSFETs are briefly outlined.
This document discusses MOS and BiCMOS circuit design processes. It describes the layers used in MOS circuits and provides color encodings for stick diagrams. Stick diagrams capture layer information through simple diagrams and act as an interface between symbolic circuits and layouts. The document outlines the NMOS and CMOS design processes, including rules for drawing stick diagrams and placing transistors. It also covers design rules and lambda-based rules for layout dimensions and separations. Contact cuts and buried contacts are discussed for making electrical connections between layers.
Effects of Scaling on MOS Device Performanceiosrjce
This paper presents effects on MOS transistor performance due to scaling of its dimensions. Scaling
theory deals with the change in the device characteristics with the decrease in the dimensions of a MOS
transistor. MOS transistors are continuously scaled down due to the desire for high density and high
functionality VLSI chips. The driving forces behind these developments are increasing the demand for portable
systems requiring high throughput and high integration capacity. Effects of scaling on the performance
characteristics of a MOS device are analyzed in this paper
This presentation discusses the Lambda based design rules for drawing the layouts. The spacing between ltwo layers, extent if of overlap, minimum dimensions of each layer etc are decided by the lambda based design rules. the separation between metal and poly, poly and diffusion , width of metal etc
The document discusses design rules for NMOS and CMOS layouts. It introduces the concepts of stick diagrams and layout diagrams. Stick diagrams provide placement and connection details without exact dimensions, while layout diagrams include all device dimensions. Design rules specify minimum feature sizes and separations between layers to ensure proper fabrication and yield. Examples of NMOS inverters, NAND and NOR gates are presented along with their stick diagrams and transistor aspect ratios. Finally, industry standard and λ-based design rules are described.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
The document discusses MOSFET transistors. It describes their basic structure as having a gate, source and drain, with the gate separated from the semiconductor material by an insulating oxide layer. MOSFETs can be either n-channel or p-channel and either enhancement or depletion mode. Their operation depends on the voltage applied to the gate, which controls the flow of current between the source and drain. MOSFETs are widely used in applications like microprocessors and memories due to their low cost, small size and low power consumption. The CMOS inverter circuit is also discussed, which uses complementary n-channel and p-channel MOSFETs.
The document provides information about inverters and logic gates in VLSI design. It discusses NMOS and CMOS inverters, including their stick diagrams, inverter ratios, DC and transient characteristics, and switching times. It also covers super buffers for driving large capacitance loads, as well as CMOS logic structures like transmission gates and approaches for static and dynamic CMOS design. The summary describes the key components and operation of a CMOS inverter, including its multiple transistor states based on input voltage levels and the switch model used to conceptualize the inverter's functioning.
The document provides an overview of physical design in VLSI. It discusses the VLSI design flow including specification, schematic design, layout, floorplanning, routing, and fabrication. It then describes layout considerations such as layers, design rules, DRC checks, and LVS checks. Examples of CMOS inverter, NAND and NOR gate layouts are shown. Optimization techniques for transistor sizing and drain connections are also covered. Different logic styles like pseudo-NMOS, dynamic CMOS, and domino logic are explained.
This document provides an overview of the physical design process for integrated circuits. It discusses the steps from schematic design to layout, including floorplanning, placement, routing, and design rule checking. Sample schematics and layouts are shown for basic gates like inverters, NAND gates, and transmission gates. Guidelines are provided for layout optimization to improve performance and density. The layout process involves translating the schematic into distinct layers and ensuring design rules are followed with respect to dimensions, spacing, and connectivity between layers.
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
This document provides course materials for the subject EC3552 VLSI and Chip Design, including the course objectives, 5 units of study, expected course outcomes, and references. The 5 units cover MOS transistor principles, combinational logic circuits, sequential logic circuits and clocking strategies, memory architecture and arithmetic circuits, and ASIC design and testing. Key concepts include MOSFET characteristics, static and dynamic CMOS design, latches and registers, interconnect modeling, and the ASIC design flow. The course aims to provide an in-depth understanding of IC technology components, logic circuit design principles, memory architectures, and the chip design process.
This document discusses VLSI circuit design and focuses on wire characterization and performance estimation. It covers several topics related to wires including wire resistance, capacitance, RC delay, crosstalk, and the use of repeaters. Modern chip designs rely heavily on wires, known as interconnects, to connect transistors. As process technologies shrink, wires become more important for determining chip speed, power consumption, and noise.
MOS and CMOS circuit design involves several key concepts:
1. Circuits are formed from diffusion, polysilicon, and metal layers isolated by silicon dioxide. Transistors form where polysilicon crosses diffusion regions.
2. Stick diagrams use colors to represent layers and convey topology. Layout diagrams translate stick diagrams into mask patterns matching silicon topology.
3. Design rules parameterized by λ ensure mask layouts produce working circuits across fabrication processes by specifying minimum widths, separations, and extensions in units of λ.
The document outlines the lecture slides for a course on VLSI Design. It covers topics such as introduction to IC technology including various processes like oxidation, lithography, diffusion, and doping. It also discusses MOSFET basics like different types of MOS transistors, their symbols, characteristics and modes of operation. The summary provides an overview of the key concepts covered in the VLSI Design lecture.
- CMOS layout and design rules dictate the geometry of masks used in the fabrication process. Key masks define the active regions and gate polysilicon, which form the transistor channel.
- Design rules specify minimum separations between regions, such as keeping contacts at least 2l away from gates to prevent shorts. They also define minimum widths, such as gates extending 2l past active regions.
- Following design rules ensures proper transistor functioning despite potential mask misalignments during fabrication. Common layout techniques minimize capacitances and transistor mismatches.
Stick diagrams are used to represent VLSI layouts in an abstract way, showing the relative placements and connections between different layers like polysilicon, diffusion, and metal layers. They follow rules like only allowing electrical contact between sticks of the same layer when they cross. Euler graphs can be used to determine if a CMOS logic gate layout is possible by finding an Euler path through the graph. MOS transistors have different operating regions depending on voltages, and their I-V characteristics can be modeled based on factors like channel charge and carrier mobility. Parasitic capacitances also exist between diffusion regions, gates, and the substrate.
This document discusses design processes and rules for MOS and BiCMOS circuit design. It provides details on:
1) MOS layers including n-diffusion, p-diffusion, polysilicon, and metal layers used to form transistors. BiCMOS adds layers for bipolar transistors.
2) Stick diagrams which use color coding to represent different layers and abstract chip layout from transistor schematics.
3) Design rules including lambda-based rules that specify minimum feature sizes and separations to translate circuit designs into mask layouts that can be fabricated.
This document provides information on sizing junction boxes and determining conductor bending radii according to NEC standards. It discusses the definitions and formulas for calculating junction box length and width based on conduit sizes and configurations. Minimum bending radii requirements are presented for various sized conductors and fiber optic cables. Quiz questions are also included at the end to test comprehension.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
This document contains lecture slides on VLSI circuit design processes from the Department of Electronics and Communication Engineering at VBIT. It discusses topics like VLSI design flow, MOS layers, stick diagrams, design rules, layout diagrams for basic gates like inverters, and scaling of MOS circuits. The document provides illustrations and explanations of concepts like stick diagrams, nMOS and CMOS inverter layout, NAND gate layout, and encodings for representing different layers in VLSI design.
The document discusses the structure and operation of MOSFET transistors. It describes how applying a voltage between the gate and source terminals can induce a conducting channel between the drain and source, allowing current to flow. The relationship between drain current and drain-source voltage depends on whether vDS is smaller than, equal to, or greater than the overdrive voltage vOV. In saturation, when vDS exceeds vOV, further increasing vDS no longer affects the drain current.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
The document discusses basic concepts in VLSI design including:
- The history and progression of integrated circuit generations from SSI to VLSI to ULSI.
- The basic operation and types (enhancement vs depletion, NMOS vs PMOS) of MOS transistors.
- Fabrication processes for CMOS, including masks, diffusion, deposition of oxide and polysilicon layers.
- Threshold voltage and factors that determine it such as oxide thickness and charges at interfaces.
This document summarizes the evolution of LDMOS transistor technology for S-band radar applications over the last decade. Key improvements include a doubling of power density at 3.6 GHz to over 1 W/mm, and an increase in gain from 7 dB to 14 dB. The latest generation LDMOS devices outperform bipolar transistors at S-band frequencies, with gains over 5 dB higher and efficiencies 5-10% greater. 100W and 120W microwave products in the S-band demonstrate state-of-the-art performance with gains of 11-12 dB and efficiencies near 50%.
This document provides an introduction and overview of analog-to-digital converters (ADCs). It discusses key ADC characteristics and values such as resolution, reference voltage, least significant bit, full scale range, and errors. It also describes several common types of Nyquist-rate ADCs, including dual-slope integrating ADCs, successive approximation ADCs, algorithmic ADCs, flash ADCs, and pipelined ADCs. For each ADC type, it highlights pros and cons in terms of speed, accuracy, power, and area requirements.
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Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
The document discusses MOSFET transistors. It describes their basic structure as having a gate, source and drain, with the gate separated from the semiconductor material by an insulating oxide layer. MOSFETs can be either n-channel or p-channel and either enhancement or depletion mode. Their operation depends on the voltage applied to the gate, which controls the flow of current between the source and drain. MOSFETs are widely used in applications like microprocessors and memories due to their low cost, small size and low power consumption. The CMOS inverter circuit is also discussed, which uses complementary n-channel and p-channel MOSFETs.
The document provides information about inverters and logic gates in VLSI design. It discusses NMOS and CMOS inverters, including their stick diagrams, inverter ratios, DC and transient characteristics, and switching times. It also covers super buffers for driving large capacitance loads, as well as CMOS logic structures like transmission gates and approaches for static and dynamic CMOS design. The summary describes the key components and operation of a CMOS inverter, including its multiple transistor states based on input voltage levels and the switch model used to conceptualize the inverter's functioning.
The document provides an overview of physical design in VLSI. It discusses the VLSI design flow including specification, schematic design, layout, floorplanning, routing, and fabrication. It then describes layout considerations such as layers, design rules, DRC checks, and LVS checks. Examples of CMOS inverter, NAND and NOR gate layouts are shown. Optimization techniques for transistor sizing and drain connections are also covered. Different logic styles like pseudo-NMOS, dynamic CMOS, and domino logic are explained.
This document provides an overview of the physical design process for integrated circuits. It discusses the steps from schematic design to layout, including floorplanning, placement, routing, and design rule checking. Sample schematics and layouts are shown for basic gates like inverters, NAND gates, and transmission gates. Guidelines are provided for layout optimization to improve performance and density. The layout process involves translating the schematic into distinct layers and ensuring design rules are followed with respect to dimensions, spacing, and connectivity between layers.
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
This document provides course materials for the subject EC3552 VLSI and Chip Design, including the course objectives, 5 units of study, expected course outcomes, and references. The 5 units cover MOS transistor principles, combinational logic circuits, sequential logic circuits and clocking strategies, memory architecture and arithmetic circuits, and ASIC design and testing. Key concepts include MOSFET characteristics, static and dynamic CMOS design, latches and registers, interconnect modeling, and the ASIC design flow. The course aims to provide an in-depth understanding of IC technology components, logic circuit design principles, memory architectures, and the chip design process.
This document discusses VLSI circuit design and focuses on wire characterization and performance estimation. It covers several topics related to wires including wire resistance, capacitance, RC delay, crosstalk, and the use of repeaters. Modern chip designs rely heavily on wires, known as interconnects, to connect transistors. As process technologies shrink, wires become more important for determining chip speed, power consumption, and noise.
MOS and CMOS circuit design involves several key concepts:
1. Circuits are formed from diffusion, polysilicon, and metal layers isolated by silicon dioxide. Transistors form where polysilicon crosses diffusion regions.
2. Stick diagrams use colors to represent layers and convey topology. Layout diagrams translate stick diagrams into mask patterns matching silicon topology.
3. Design rules parameterized by λ ensure mask layouts produce working circuits across fabrication processes by specifying minimum widths, separations, and extensions in units of λ.
The document outlines the lecture slides for a course on VLSI Design. It covers topics such as introduction to IC technology including various processes like oxidation, lithography, diffusion, and doping. It also discusses MOSFET basics like different types of MOS transistors, their symbols, characteristics and modes of operation. The summary provides an overview of the key concepts covered in the VLSI Design lecture.
- CMOS layout and design rules dictate the geometry of masks used in the fabrication process. Key masks define the active regions and gate polysilicon, which form the transistor channel.
- Design rules specify minimum separations between regions, such as keeping contacts at least 2l away from gates to prevent shorts. They also define minimum widths, such as gates extending 2l past active regions.
- Following design rules ensures proper transistor functioning despite potential mask misalignments during fabrication. Common layout techniques minimize capacitances and transistor mismatches.
Stick diagrams are used to represent VLSI layouts in an abstract way, showing the relative placements and connections between different layers like polysilicon, diffusion, and metal layers. They follow rules like only allowing electrical contact between sticks of the same layer when they cross. Euler graphs can be used to determine if a CMOS logic gate layout is possible by finding an Euler path through the graph. MOS transistors have different operating regions depending on voltages, and their I-V characteristics can be modeled based on factors like channel charge and carrier mobility. Parasitic capacitances also exist between diffusion regions, gates, and the substrate.
This document discusses design processes and rules for MOS and BiCMOS circuit design. It provides details on:
1) MOS layers including n-diffusion, p-diffusion, polysilicon, and metal layers used to form transistors. BiCMOS adds layers for bipolar transistors.
2) Stick diagrams which use color coding to represent different layers and abstract chip layout from transistor schematics.
3) Design rules including lambda-based rules that specify minimum feature sizes and separations to translate circuit designs into mask layouts that can be fabricated.
This document provides information on sizing junction boxes and determining conductor bending radii according to NEC standards. It discusses the definitions and formulas for calculating junction box length and width based on conduit sizes and configurations. Minimum bending radii requirements are presented for various sized conductors and fiber optic cables. Quiz questions are also included at the end to test comprehension.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
This document contains lecture slides on VLSI circuit design processes from the Department of Electronics and Communication Engineering at VBIT. It discusses topics like VLSI design flow, MOS layers, stick diagrams, design rules, layout diagrams for basic gates like inverters, and scaling of MOS circuits. The document provides illustrations and explanations of concepts like stick diagrams, nMOS and CMOS inverter layout, NAND gate layout, and encodings for representing different layers in VLSI design.
The document discusses the structure and operation of MOSFET transistors. It describes how applying a voltage between the gate and source terminals can induce a conducting channel between the drain and source, allowing current to flow. The relationship between drain current and drain-source voltage depends on whether vDS is smaller than, equal to, or greater than the overdrive voltage vOV. In saturation, when vDS exceeds vOV, further increasing vDS no longer affects the drain current.
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
The document discusses basic concepts in VLSI design including:
- The history and progression of integrated circuit generations from SSI to VLSI to ULSI.
- The basic operation and types (enhancement vs depletion, NMOS vs PMOS) of MOS transistors.
- Fabrication processes for CMOS, including masks, diffusion, deposition of oxide and polysilicon layers.
- Threshold voltage and factors that determine it such as oxide thickness and charges at interfaces.
This document summarizes the evolution of LDMOS transistor technology for S-band radar applications over the last decade. Key improvements include a doubling of power density at 3.6 GHz to over 1 W/mm, and an increase in gain from 7 dB to 14 dB. The latest generation LDMOS devices outperform bipolar transistors at S-band frequencies, with gains over 5 dB higher and efficiencies 5-10% greater. 100W and 120W microwave products in the S-band demonstrate state-of-the-art performance with gains of 11-12 dB and efficiencies near 50%.
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Consolidation Settlement Calculation Program-The Python Code
By Professor Dr. Costas Sachpazis, Civil Engineer & Geologist
This program calculates the consolidation settlement for a foundation based on soil layer properties and foundation data. It allows users to input multiple soil layers and foundation characteristics to determine the total settlement.
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We have designed & manufacture the Lubi Valves LBF series type of Butterfly Valves for General Utility Water applications as well as for HVAC applications.
Covid Management System Project Report.pdfKamal Acharya
CoVID-19 sprang up in Wuhan China in November 2019 and was declared a pandemic by the in January 2020 World Health Organization (WHO). Like the Spanish flu of 1918 that claimed millions of lives, the COVID-19 has caused the demise of thousands with China, Italy, Spain, USA and India having the highest statistics on infection and mortality rates. Regardless of existing sophisticated technologies and medical science, the spread has continued to surge high. With this COVID-19 Management System, organizations can respond virtually to the COVID-19 pandemic and protect, educate and care for citizens in the community in a quick and effective manner. This comprehensive solution not only helps in containing the virus but also proactively empowers both citizens and care providers to minimize the spread of the virus through targeted strategies and education.
Sri Guru Hargobind Ji - Bandi Chor Guru.pdfBalvir Singh
Sri Guru Hargobind Ji (19 June 1595 - 3 March 1644) is revered as the Sixth Nanak.
• On 25 May 1606 Guru Arjan nominated his son Sri Hargobind Ji as his successor. Shortly
afterwards, Guru Arjan was arrested, tortured and killed by order of the Mogul Emperor
Jahangir.
• Guru Hargobind's succession ceremony took place on 24 June 1606. He was barely
eleven years old when he became 6th Guru.
• As ordered by Guru Arjan Dev Ji, he put on two swords, one indicated his spiritual
authority (PIRI) and the other, his temporal authority (MIRI). He thus for the first time
initiated military tradition in the Sikh faith to resist religious persecution, protect
people’s freedom and independence to practice religion by choice. He transformed
Sikhs to be Saints and Soldier.
• He had a long tenure as Guru, lasting 37 years, 9 months and 3 days
5. MOS Layers :
There are 4 layers
• N-diffusion
• P-diffusion
• Poly Si
• Metal
6. Stick Diagrams :
➢ A stick diagram is a cartoon of a layout.
➢ Does show all components/ vias (except possibly tub
ties), relative placement.
➢ Does not show exact placement, transistor sizes, wire
lengths, wire widths, tub boundaries
7. • Key idea: "Stick figure cartoon" of a layout
• Useful for planning layout
o relative placement of transistors
o assignment of signals to layers
o connections between cells
o cell hierarchy
8. Rules for Drawing Stick Diagrams :
• Metal 1
• Poly Si
• N-diffusion
• P-diffusion
Rule 1:
• When two or more sticks of the same type cross or
touch other that represents electrical contact.
9. Rule 2:
• When two or more sticks of different type cross or touch
other there is no electrical contact.(if contact is needed
show explicitly)
10. Rule 3: When a poly crosses diffusion it represents
MOSFET. If contact is shown it is not transistor.
nMOSFET pMOSFET nMOSFET
(Depletion Mode)
11. nMOS Design Style:
Step 1:Draw metal VDD and GND rails in parallel leaving
sufficient space for circuit components between them.
VDD
GND
Step 2: Thinox (green) paths are drawn between
rails for inverter & inverter logic.
Vin
VOUT
VDD
GND
44. Scaling
• VLSI technology is constantly evolving towards
smaller line widths
• Reduced feature size generally leads to
– better / faster performance
– More gate / chip
• More accurate description of modern technology
is ULSI (ultra large scale integration
45. Scaling Factors
• In our discussions we will consider 2 scaling
factors, α and β
• 1/ β is the scaling factor for VDD and oxide
thickness D
• 1/ α is scaling factor for all other linear
dimensions
• We will assume electric field is kept constant
46. Scaling Factors for Device Parameters
Simple derivations showing the effects of scaling are derived in Pucknell
and Eshraghian pages 125 - 129
It is important that you understand how the following parameters are
effected by scaling.
• Gate Area
• Gate Capacitance per unit area
• Gate Capacitance
• Charge in Channel
• Channel Resistance
• Transistor Delay
• Maximum Operating Frequency
• Transistor Current
• Switching Energy
• Power Dissipation Per Gate (Static and Dynamic)
• Power Dissipation Per Unit Area
• Power - Speed Product
47. MOSFET Scaling
❑ Constant Field Scaling
❑ Constant Voltage Scaling
❑ Lateral Scaling
❑SCALING - refers to ordered reduction in dimensions of the
MOSFET and other VLSI features
❑Reduce Size of VLSI chips.
❑Change operational characteristics of MOSFETs and parasitic.
❑Physical limits restrict degree of scaling that can be achieved.
48. Constant Field Scaling
❑ The electric field E is kept constant, and the scaled device is
obtained by applying a dimensionless scale-factor α (such
that E is unchanged):
❑ all dimensions, including those vertical to the
surface (1/α)
❑ device voltages (1/α)
❑ the concentration densities (α).
49. Constant Voltage Scaling
❑ Vdd is kept constant.
❑ All dimensions, including those vertical to the surface
are scaled.
❑ Concentration densities are scaled.
50. Lateral Scaling
❑ Only the gate length is scaled L = 1/α (gate-shrink).
❑ Year Feature Size(μm)
1980 5.0
1983 3.5
1985 2.5
1987 1.75
1989 1.25
1991 1.0
1993 0.8
1995 0.6
51. PARAMETER SCALING MODEL
Constant Constant Lateral
Field Voltage
Length (L) 1/α 1/α
1/α
Width (W) 1/α 1/α
1
Supply Voltage (V) 1/α 1 1
Gate Oxide thickness (tox) 1/α 1/α
1
Junction depth (Xj) 1/α 1/α 1
Current (I) 1/α α α
Power Dissipation (P) 1/α2 α α
Electric Field 1 α 1
Load Capacitance (C) 1/α 1/α
52. Scaling of Interconnects
• Resistance of track R ~ L / wt
• R (scaled) ~ (L / α) / ( (w/ α )* (t
/α))
• R(scaled) = αR
• therefore resistance increases with
scaling
t w L
A
B
53. Scaling - Time Constant
• Time constant of track connected to gate,
• T = R * Cg
• T(scaled) = α R * (β / α2) *Cg = (β / α) *R*Cg
• Let β = α, therefore T is unscaled!
• Therefore delays in tracks don’t reduce with scaling
• Therefore as tracks get proportionately larger, effect gets
worse
• Cross talk between connections gets worse because of reduced
spacing
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