Switched capacitor filters use capacitors and switches controlled by non-overlapping clocks to emulate resistors. This allows filters to be implemented using only capacitors and switches, avoiding the large silicon area needed for resistors. The document discusses the basic building blocks, operation, analysis of switched capacitor filters and compares them to other filter types. It covers advantages like reduced power and high integration density, and disadvantages like noise from sampling and need for clock circuits.
This document discusses various low power techniques for integrated circuits. It begins by describing the increasing challenges of power consumption as device densities and clock frequencies increase while supply voltages and threshold voltages decrease. It then discusses different types of power consumption, including dynamic power, static power, leakage power from different sources, and how they can be reduced. The document covers many low power design techniques like multi-threshold CMOS, clock gating, multi-voltage, DVFS, and more. It discusses the evolution of these techniques and challenges in their implementation like timing issues, level shifters, and floorplanning for multi-voltage designs.
Low Power VLSI design architecture for EDA (Electronic Design Automation) and Modern Power Estimation, Reduction and Fixing technologies including clock gating and power gating
The successive approximation register (SAR) analog-to-digital converter (ADC) uses a binary search algorithm to iteratively approximate the digital output value for an analog input signal. For each bit, it outputs a value from the digital-to-analog converter (DAC) based on the previous bits, compares this to the input, and sets the current bit accordingly. This process is repeated for all bits until the full digital output value is determined. SAR ADCs are well suited for applications requiring 8-16 bit resolution at sampling rates under 10 megasamples per second, as they have low power consumption and a small physical size but trade off in maximum sampling speed.
The Master Synchronous Serial Port (MSSP) module allows communication with peripheral devices using either Serial Peripheral Interface (SPI) or Inter-Integrated Circuit (I2C) protocols. In SPI mode, data is synchronously transmitted and received on three pins - Serial Data Out, Serial Data In, and Serial Clock. The MSSP has registers for status, control, and buffering data during read and write operations according to the SPI protocol.
Image result for bistable multivibrator
The Bistable Multivibrator is another type of two state device similar to the Monostable Multivibrator we looked at in the previous tutorial but the difference this time is that BOTH states are stable.
This document provides an overview of digital to analog converters (DACs). It begins with an introduction to analog, discrete, and digital signals. It then discusses the basic specifications of DACs including resolution, speed, linearity, settling time, reference voltages, and errors. The document outlines the main types of DACs - weighted resistor DACs, R-2R ladder DACs, switched current source DACs. It also discusses applications such as digital audio and discusses errors that can occur in DACs such as gain error and offset error. In closing, it thanks the reader.
The document discusses the MSP430 microcontroller from Texas Instruments. It describes the MSP430 as a 16-bit RISC microcontroller with low power consumption suitable for applications such as sensor systems. The document summarizes the MSP430's architecture, which includes a 16-bit CPU core, seven addressing modes, 27 core instructions, and six low-power modes. It also discusses the MSP430's memory architecture, peripherals, and other features that enable ultra-low power operation.
The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the basic structure of the MOSFET, including the source, gate, and drain terminals. It also discusses the different types of MOSFETs, such as n-channel and p-channel MOSFETs, as well as depletion and enhancement MOSFETs. The key characteristics of MOSFETs are summarized, including the different regions of operation depending on the voltages applied to the gate, source, and drain terminals. Common applications of MOSFETs in analog and digital circuits are also outlined.
This document discusses various low power techniques for integrated circuits. It begins by describing the increasing challenges of power consumption as device densities and clock frequencies increase while supply voltages and threshold voltages decrease. It then discusses different types of power consumption, including dynamic power, static power, leakage power from different sources, and how they can be reduced. The document covers many low power design techniques like multi-threshold CMOS, clock gating, multi-voltage, DVFS, and more. It discusses the evolution of these techniques and challenges in their implementation like timing issues, level shifters, and floorplanning for multi-voltage designs.
Low Power VLSI design architecture for EDA (Electronic Design Automation) and Modern Power Estimation, Reduction and Fixing technologies including clock gating and power gating
The successive approximation register (SAR) analog-to-digital converter (ADC) uses a binary search algorithm to iteratively approximate the digital output value for an analog input signal. For each bit, it outputs a value from the digital-to-analog converter (DAC) based on the previous bits, compares this to the input, and sets the current bit accordingly. This process is repeated for all bits until the full digital output value is determined. SAR ADCs are well suited for applications requiring 8-16 bit resolution at sampling rates under 10 megasamples per second, as they have low power consumption and a small physical size but trade off in maximum sampling speed.
The Master Synchronous Serial Port (MSSP) module allows communication with peripheral devices using either Serial Peripheral Interface (SPI) or Inter-Integrated Circuit (I2C) protocols. In SPI mode, data is synchronously transmitted and received on three pins - Serial Data Out, Serial Data In, and Serial Clock. The MSSP has registers for status, control, and buffering data during read and write operations according to the SPI protocol.
Image result for bistable multivibrator
The Bistable Multivibrator is another type of two state device similar to the Monostable Multivibrator we looked at in the previous tutorial but the difference this time is that BOTH states are stable.
This document provides an overview of digital to analog converters (DACs). It begins with an introduction to analog, discrete, and digital signals. It then discusses the basic specifications of DACs including resolution, speed, linearity, settling time, reference voltages, and errors. The document outlines the main types of DACs - weighted resistor DACs, R-2R ladder DACs, switched current source DACs. It also discusses applications such as digital audio and discusses errors that can occur in DACs such as gain error and offset error. In closing, it thanks the reader.
The document discusses the MSP430 microcontroller from Texas Instruments. It describes the MSP430 as a 16-bit RISC microcontroller with low power consumption suitable for applications such as sensor systems. The document summarizes the MSP430's architecture, which includes a 16-bit CPU core, seven addressing modes, 27 core instructions, and six low-power modes. It also discusses the MSP430's memory architecture, peripherals, and other features that enable ultra-low power operation.
The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the basic structure of the MOSFET, including the source, gate, and drain terminals. It also discusses the different types of MOSFETs, such as n-channel and p-channel MOSFETs, as well as depletion and enhancement MOSFETs. The key characteristics of MOSFETs are summarized, including the different regions of operation depending on the voltages applied to the gate, source, and drain terminals. Common applications of MOSFETs in analog and digital circuits are also outlined.
Low Power Design Techniques for ASIC / SOC DesignRajesh_navandar
1. Low power techniques aim to reduce both dynamic and static/leakage power in integrated circuits. Dynamic power is reduced through techniques like lowering supply voltage and clock frequency, while leakage power is reduced by increasing transistor threshold voltage.
2. Power gating is a widely used technique that temporarily turns off unused circuit blocks to drastically reduce leakage power. It requires additional power switches and isolation cells to safely turn blocks on and off.
3. Multi-threshold CMOS uses both low and high threshold voltage transistors optimized for performance and leakage respectively. Further scaling presents new challenges as leakage power becomes dominant.
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
This document provides an introduction to PIC microcontrollers. It discusses the architecture of PIC microcontrollers, including the 16C6x and 16C7x architectures. It describes the registers, memory, and instruction set of PIC microcontrollers. Some key points covered include the Harvard architecture, pipelining, addressing modes, arithmetic, logical, and conditional instructions. Peripherals like timers and interrupts are also mentioned.
This document discusses CMOS logic circuits. It begins by defining logic values and how bits are encoded using voltage levels. It then discusses different logic gates like inverters, NAND, NOR and buffers. It explains that logic gates are made from MOS transistors and describes the characteristics of N-type and P-type MOSFETs. The rest of the document discusses various electrical characteristics of CMOS logic circuits like logic levels, noise margins, input/output currents, fan-in, fan-out, propagation delay and power consumption. It also briefly mentions different CMOS logic families and issues around interfacing CMOS and TTL logic standards.
The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.
This document discusses field programmable gate arrays (FPGAs). It begins by describing FPGA basics and architecture, including configurable logic blocks (CLBs), I/O blocks, and switch matrices. It then discusses FPGA advantages such as low cost, fast prototyping, and reusability. The document also covers FPGA process technologies including SRAM, antifuse, and EPROM/EEPROM/Flash. It provides details on FPGA architectures, logic elements, routing, memory blocks, and examples of Xilinx FPGAs.
The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.
This document discusses memory circuits and techniques to reduce power consumption in memories. It describes the key components of memory control units including address decoders, sense amplifiers, voltage references, drivers/buffers, and timing and control circuits. Address decoders reduce the number of select signals needed for memory access. Sense amplifiers amplify signals from memory cells for data readout. Various voltage references are needed for memory operation. Power consumption comes from the memory cell array, decoders, and periphery circuits. Partitioning memory and reducing voltage levels can lower active power, while techniques like half VDD precharge and boosted word lines reduce DRAM retention power. Turning off unused blocks and increasing thresholds cuts SRAM retention power.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
This document discusses various designs for digital multipliers. It begins by reviewing the basic building blocks used in digital circuits and how binary multiplication works by adding partial products. It then describes approaches for implementing multiplication, including right shift and add serial multipliers and faster parallel array and tree multipliers. Booth encoding is introduced as a technique to reduce the number of stages in a multiplier. Implementation details are provided for array and Wallace tree multipliers, including the use of compression cells like the (4,2) counter. Optimization goals for multipliers differ from adders in emphasizing reducing the critical path.
The document presents information on MOSFET operation and characteristics. It discusses that MOSFETs are widely used in electronics as switches and for auto intensity control of street lights. It describes the basic construction of MOSFETs, noting they have an insulating layer of SiO2 and a polysilicon gate. The two main types of MOSFETs are introduced as enhancement type and depletion type. Key characteristics of enhancement type MOSFETs are described, including that drain current increases with increasing gate-source voltage above a threshold.
This document describes three classes of transistor amplifier operation: Class A, B, and C.
Class A operation has one device conducting over the entire AC cycle with a conduction angle of 360 degrees. Class B has two devices each conducting for half the cycle with a conduction angle of 180 degrees. Class C has very brief conduction over a small portion of the cycle with a conduction angle less than 180 degrees.
Class A has the highest linearity and lowest distortion but also the lowest maximum efficiency of 25%. Class B has a higher maximum efficiency of 78.5% while Class C can reach 100% efficiency but has the poorest linearity and highest distortion.
This document discusses channel length modulation in MOSFETs. It explains that in saturation, the channel length decreases with increasing drain voltage due to the depletion region extending farther into the channel. This effectively reduces the channel length and increases the drain current. The document derives an expression for drain current that includes a channel length modulation coefficient to model this effect, showing that current increases with higher drain voltages due to the reduced channel length.
Low power VLSI design has become an important discipline due to increasing device densities, operating frequencies, and proliferation of portable electronics. Power dissipation, which was previously neglected, is now a primary design constraint. There are several sources of power dissipation in CMOS circuits, including switching power due to charging and discharging capacitances, short-circuit power during signal transitions, and leakage power from subthreshold and gate leakage currents. Designers have some control over power consumption by optimizing factors such as activity levels, clock frequency, supply voltage, transistor sizing and architecture.
The 8051 microcontroller has 40 pins that provide input/output capabilities. It has four 8-bit I/O ports (P0, P1, P2, P3) that allow connection to external devices. Unlike microprocessors, the 8051 has onboard I/O ports so no additional chips are needed. The I/O ports use circuits that allow pins to be individually configured as inputs or outputs using latches controlled by the microcontroller.
The document describes the instruction set of the 8051 microprocessor. It is divided into 5 groups: arithmetic, logic, data transfer, boolean, and branching instructions. The arithmetic instructions include ADD, ADDC, DA for decimal adjust, and INC/DEC. Logic instructions include ANL, ORL, and SWAP. Data transfer instructions move data between registers and memory. Boolean instructions manipulate individual bits. Branching instructions include conditional jumps, calls, and returns.
This document discusses switched-capacitor circuits. It begins by introducing the concept of using switched capacitors to emulate resistors and implement functions like integration. It then provides examples of basic switched-capacitor circuits like integrators. It discusses issues like noise and non-ideal effects in switched-capacitor circuits. It also provides examples of applications that use switched-capacitor circuits, such as filters, sigma-delta modulators, and pipelined ADCs.
Switched capacitor filters (SC filters) operate by replacing physical resistors with an equivalent resistor formed by a capacitor and two switches driven by non-overlapping clock signals. This allows for high integration density as capacitor and switch areas are much smaller than resistor areas. SC filters function by transferring analog signal samples (as charges on capacitors) between storage elements. Their transfer functions are proportional to sample frequency and capacitor ratios, and they can implement both low-pass and high-pass filters. While reducing power and size, SC filters introduce noise from the switch resistance and require clock circuits.
Low Power Design Techniques for ASIC / SOC DesignRajesh_navandar
1. Low power techniques aim to reduce both dynamic and static/leakage power in integrated circuits. Dynamic power is reduced through techniques like lowering supply voltage and clock frequency, while leakage power is reduced by increasing transistor threshold voltage.
2. Power gating is a widely used technique that temporarily turns off unused circuit blocks to drastically reduce leakage power. It requires additional power switches and isolation cells to safely turn blocks on and off.
3. Multi-threshold CMOS uses both low and high threshold voltage transistors optimized for performance and leakage respectively. Further scaling presents new challenges as leakage power becomes dominant.
Field Effect Transistor, JFET, Metal Oxide Semiconductor Field Effect Transistor, Depletion MOSFET, Enhancement MoSFET, Construction, Basic operation, Regions of Operation, Drain Characteristics, Transfer Characteristics, Biasing, Non-Ideal Characteristics of E-MOSFET, DC Analysis, AC equivalent circuit and Parameters, E-MOSFET as an Amplifier, AC analysis, MOSFET as a Switch, MOSFET as a diode, MOSFET as a resistor, High frequency equivalent circuit, Miller Capacitance, Frequency Response, NMOS and CMOS inverter
This document provides an introduction to PIC microcontrollers. It discusses the architecture of PIC microcontrollers, including the 16C6x and 16C7x architectures. It describes the registers, memory, and instruction set of PIC microcontrollers. Some key points covered include the Harvard architecture, pipelining, addressing modes, arithmetic, logical, and conditional instructions. Peripherals like timers and interrupts are also mentioned.
This document discusses CMOS logic circuits. It begins by defining logic values and how bits are encoded using voltage levels. It then discusses different logic gates like inverters, NAND, NOR and buffers. It explains that logic gates are made from MOS transistors and describes the characteristics of N-type and P-type MOSFETs. The rest of the document discusses various electrical characteristics of CMOS logic circuits like logic levels, noise margins, input/output currents, fan-in, fan-out, propagation delay and power consumption. It also briefly mentions different CMOS logic families and issues around interfacing CMOS and TTL logic standards.
The document discusses the MOS transistor and its operation. It begins by describing the components and structure of the MOS transistor, including the polysilicon gate, aluminum contacts, and silicon dioxide layer. It then discusses the energy band diagrams and how applying different gate voltages results in accumulation, depletion, or inversion at the surface. The document also covers the threshold voltage, its dependence on factors like doping and oxide thickness, and its impact on MOSFET operation. It concludes by deriving the MOSFET drain current equation using the gradual channel approximation approach.
This document discusses field programmable gate arrays (FPGAs). It begins by describing FPGA basics and architecture, including configurable logic blocks (CLBs), I/O blocks, and switch matrices. It then discusses FPGA advantages such as low cost, fast prototyping, and reusability. The document also covers FPGA process technologies including SRAM, antifuse, and EPROM/EEPROM/Flash. It provides details on FPGA architectures, logic elements, routing, memory blocks, and examples of Xilinx FPGAs.
The document discusses the structure and operation of MOS transistors. It describes the basic MOS structure which consists of a metal gate separated from a semiconductor substrate by an oxide layer. Applying a voltage to the gate can induce an inversion layer in the semiconductor to form a channel between the source and drain, allowing current to flow. The threshold voltage is the minimum gate voltage required to form an inversion layer. The document discusses n-channel MOSFETs and their characteristics in different regions of operation defined by the gate-source voltage.
This document discusses memory circuits and techniques to reduce power consumption in memories. It describes the key components of memory control units including address decoders, sense amplifiers, voltage references, drivers/buffers, and timing and control circuits. Address decoders reduce the number of select signals needed for memory access. Sense amplifiers amplify signals from memory cells for data readout. Various voltage references are needed for memory operation. Power consumption comes from the memory cell array, decoders, and periphery circuits. Partitioning memory and reducing voltage levels can lower active power, while techniques like half VDD precharge and boosted word lines reduce DRAM retention power. Turning off unused blocks and increasing thresholds cuts SRAM retention power.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
This document discusses various designs for digital multipliers. It begins by reviewing the basic building blocks used in digital circuits and how binary multiplication works by adding partial products. It then describes approaches for implementing multiplication, including right shift and add serial multipliers and faster parallel array and tree multipliers. Booth encoding is introduced as a technique to reduce the number of stages in a multiplier. Implementation details are provided for array and Wallace tree multipliers, including the use of compression cells like the (4,2) counter. Optimization goals for multipliers differ from adders in emphasizing reducing the critical path.
The document presents information on MOSFET operation and characteristics. It discusses that MOSFETs are widely used in electronics as switches and for auto intensity control of street lights. It describes the basic construction of MOSFETs, noting they have an insulating layer of SiO2 and a polysilicon gate. The two main types of MOSFETs are introduced as enhancement type and depletion type. Key characteristics of enhancement type MOSFETs are described, including that drain current increases with increasing gate-source voltage above a threshold.
This document describes three classes of transistor amplifier operation: Class A, B, and C.
Class A operation has one device conducting over the entire AC cycle with a conduction angle of 360 degrees. Class B has two devices each conducting for half the cycle with a conduction angle of 180 degrees. Class C has very brief conduction over a small portion of the cycle with a conduction angle less than 180 degrees.
Class A has the highest linearity and lowest distortion but also the lowest maximum efficiency of 25%. Class B has a higher maximum efficiency of 78.5% while Class C can reach 100% efficiency but has the poorest linearity and highest distortion.
This document discusses channel length modulation in MOSFETs. It explains that in saturation, the channel length decreases with increasing drain voltage due to the depletion region extending farther into the channel. This effectively reduces the channel length and increases the drain current. The document derives an expression for drain current that includes a channel length modulation coefficient to model this effect, showing that current increases with higher drain voltages due to the reduced channel length.
Low power VLSI design has become an important discipline due to increasing device densities, operating frequencies, and proliferation of portable electronics. Power dissipation, which was previously neglected, is now a primary design constraint. There are several sources of power dissipation in CMOS circuits, including switching power due to charging and discharging capacitances, short-circuit power during signal transitions, and leakage power from subthreshold and gate leakage currents. Designers have some control over power consumption by optimizing factors such as activity levels, clock frequency, supply voltage, transistor sizing and architecture.
The 8051 microcontroller has 40 pins that provide input/output capabilities. It has four 8-bit I/O ports (P0, P1, P2, P3) that allow connection to external devices. Unlike microprocessors, the 8051 has onboard I/O ports so no additional chips are needed. The I/O ports use circuits that allow pins to be individually configured as inputs or outputs using latches controlled by the microcontroller.
The document describes the instruction set of the 8051 microprocessor. It is divided into 5 groups: arithmetic, logic, data transfer, boolean, and branching instructions. The arithmetic instructions include ADD, ADDC, DA for decimal adjust, and INC/DEC. Logic instructions include ANL, ORL, and SWAP. Data transfer instructions move data between registers and memory. Boolean instructions manipulate individual bits. Branching instructions include conditional jumps, calls, and returns.
This document discusses switched-capacitor circuits. It begins by introducing the concept of using switched capacitors to emulate resistors and implement functions like integration. It then provides examples of basic switched-capacitor circuits like integrators. It discusses issues like noise and non-ideal effects in switched-capacitor circuits. It also provides examples of applications that use switched-capacitor circuits, such as filters, sigma-delta modulators, and pipelined ADCs.
Switched capacitor filters (SC filters) operate by replacing physical resistors with an equivalent resistor formed by a capacitor and two switches driven by non-overlapping clock signals. This allows for high integration density as capacitor and switch areas are much smaller than resistor areas. SC filters function by transferring analog signal samples (as charges on capacitors) between storage elements. Their transfer functions are proportional to sample frequency and capacitor ratios, and they can implement both low-pass and high-pass filters. While reducing power and size, SC filters introduce noise from the switch resistance and require clock circuits.
Design & characterization of high speed power efficient cmos comparatorIAEME Publication
In this paper authors have design the High Speed Power Efficient CMOS Voltage
Comparator which can be realized in A/D Converters. The simulation is carried out in 130nm
and 90nm technologies. The supply voltage for this comparator is 1v and 0.9v for 130nm and
90nm respectively. The Characterization of comparator is done in terms of offset, ICMR,
propagation delay, power dissipation in both the technologies and the result has been
compared for both the technologies. The simulation results shows that the speed of 1.92GHz
and 2.44GHz with the power dissipation of 9.19µW and 7.45µW was achieved in 130nm and
90nm technologies respectively.
Design of a 45nm TIQ Comparator for High Speed and Low Power 4-Bit Flash ADCIDES Editor
The continued speed improvement of serial links
and appearance of new communication technologies, such as
ultra-wideband (UWB), have introduced increasing demands
on the speed and power specifications of high-speed low-tomedium
resolution analog-to-digital converters (ADCs).This
paper presents the design of high speed and ultra low power
comparator of a 4-bit ADC. The comparator used is Threshold
Inverter Quantization (TIQ) consuming less than 145μW power
with the input frequency of 1GHz and is designed using
standard CMOS (Complementary Metal Oxide
Semiconductor) technology. The power supply voltage is 0.7V
minimum which makes this design adaptable to wide variety
of System-on-Chip (SoC) applications. The complete design of
ADC is clockless which reduces the electromagnetic
interference and gives better modularity. The ADC is targeted
for 45nm as it was the mainstream CMOS technology, at the
beginning of this research. However, the circuit should be
portable to smaller feature size CMOS technologies with lower
supply voltages.
A 10-BIT 25 MS/S PIPELINED ADC USING 1.5-BIT SWITCHED CAPACITANCE BASED MDAC ...IAEME Publication
This document summarizes a research paper on the design of a 10-bit, 25 MS/s pipelined analog-to-digital converter (ADC) using a 1.5-bit switched capacitance multiplying digital-to-analog converter (MDAC) with opamp sharing in a 180nm CMOS process. Key aspects covered include:
1) The proposed ADC architecture is a 9-stage pipelined design with 1.5-bit per stage and error correction. Each MDAC stage samples the input, quantizes to 1.5 bits, subtracts the DAC output, and amplifies the residue by 2.
2) To reduce power, an opamp sharing technique is used where
This document discusses behavioral modeling and Analog Devices' approach to modeling analog-to-digital converters. It introduces ADIsimADC, Analog Devices' free behavioral modeling tool for high-speed ADCs. The presentation explains why behavioral modeling is useful, how it models converter behavior through proxies without simulating internal circuitry, and what capabilities ADIsimADC currently offers. It envisions expanding ADIsimADC to support more products and accurate modeling features in the future.
Capacitive Sensing Design in Minutes - Capsense Capacitive SensorsDaniel Smith
Download the presentation here : www.cypress.com/training
Cypress Capacitive sensing solutions Brings in elegant, reliable, and easy-to-use Capacitive touch sensing functionality to your next design with the broadest touch-sensing portfolio, including the world's smallest packages and proximity sensors with a best-in-class detection range of up to 25 cm..
The document introduces capacitive sensing and Cypress' PSoC family. It discusses how capacitive sensing detects conductive objects without physical contact by measuring capacitance. It then describes the PSoC as a programmable system-on-chip that features configurable analog and digital blocks for implementing capacitive sensing applications using its configurable architecture. Finally, it provides an overview of Cypress' capacitive sensing development tools and software.
Simulation of 3 bit Flash ADC in 0.18μmTechnology using NG SPICE Tool for Hig...ijsrd.com
This paper provides the basic simulation result for the 3 bit flash type ADC in 0.18μm technology using the NG Spice device simulator tool. It includes two stages, first stage includes 7 comparators and second stage has a thermometer encoder. The simulation is done in NG spice tool developed by university of California at Berkeley (USA).The response time of the comparator and ADC are 3.7ns and 4.9ns respectively with 50.01μw power dissipation which makes the ADC more suitable for high speed application with lower power devices.
Design of Low Power High Speed 4-Bit TIQ Based CMOS Flash ADCAman JanGra
This document summarizes the design of a 4-bit TIQ (Threshold Inverter Quantization) based CMOS flash analog-to-digital converter (ADC) for system-on-chip applications. The proposed ADC uses two cascaded CMOS inverters as comparators, eliminating the need for high-gain differential input voltage comparators and reference voltages. Simulation results show the ADC achieves high speed of 1 GSample/sec and low power consumption, with differential/integral nonlinearity errors between -0.031 to 0.026/-0.024 to 0.011 LSB respectively. Different encoder designs are also evaluated, showing a fat tree encoder has the lowest delay and power consumption.
This session combines the high speed analog signal chain from RF to baseband with FPGA-based digital signal processing for wireless communications. Topics include the high speed analog signal chain, direct conversion radio architecture, the high speed data converter interface, and FPGA-based digital signal processing for software-defined radio. The demo board uses the latest generation of Analog Devices’ high speed data converters, RF, and clocking devices, along with the Xilinx Zynq-7000 SoC. Other topics of discussion include the imperfections introduced by the modulator/demodulator with particular focus on the effect of temperature and frequency changes. In-factory and in-field algorithms that reduce the effect of these imperfections, with particular emphasis on the efficacy of in-factory set-and-forget algorithms, are examined.
This document discusses the design of high-speed, high-resolution analog-to-digital converters (ADCs) in deep submicron CMOS processes. It outlines some of the key challenges in deep submicron design such as low supply voltages and low device gains. It then describes techniques for improving the performance of critical ADC components like the front-end sampling circuitry, calibration methods for linearity errors, and time-interleaving of multiple ADCs along with associated calibration needs. The document concludes by presenting the design and performance of a 14-bit, 200MS/s ADC core implemented in a 65nm CMOS process.
Intoduction to mTouch Capacitive Touch SensingPremier Farnell
This document introduces mTouch capacitive touch sensing technology. It discusses how mTouch works using capacitive sensing without mechanical buttons. The main components are a touch sensor and relaxation oscillator circuit, which uses frequency measurement to detect changes in capacitance from a finger touch on the sensor. The sensor is constructed with copper pads on a printed circuit board with a glass or plastic covering.
The document discusses digital to analog (DAC/D/A) and analog to digital (ADC/A/D) conversion. It describes how DACs convert binary digital signals into analog voltages using techniques like weighted resistor networks and R-2R ladder circuits. ADCs convert analog voltages to digital codes, with common types being counter-based, dual-slope integrating, flash, and successive approximation converters. Successive approximation ADCs are widely used in laboratories due to their reasonable cost and conversion speeds of around 10-20ms.
This document provides an overview of digital filter design. It introduces finite impulse response (FIR) and infinite impulse response (IIR) filters. FIR filters are designed using window techniques like rectangular, Hamming, and Kaiser windows. IIR filters are designed using approximation methods like Butterworth, Chebyshev I, and Chebyshev II. MATLAB code is provided to design low pass, high pass, and other filters using different window and approximation techniques. Pros and cons of FIR and IIR filters are discussed along with references.
Filters are electrical circuits that pass specified frequency bands while attenuating signals outside that band. They are classified as active or passive. Active filters have advantages like smaller size and weight due to integrated components, and they do not load signal sources. However, they have limitations like finite bandwidth and sensitivity to temperature changes. Common filters include low pass, high pass, band pass, band stop, and all pass filters. State variable filters can produce multiple filter responses and are called universal filters.
An autotransformer has a single winding that acts as both the primary and secondary winding. It uses a common winding to vary the output voltage from zero to the input voltage by adjusting transformer taps. Autotransformers are more cost effective than two-winding transformers due to savings in copper and core material from using a single winding. However, they do not provide electrical isolation between primary and secondary circuits and have higher fault current levels. Autotransformers are commonly used for voltage regulation in laboratories or motor starting applications.
This document discusses various types of multivibrators and transistor switching circuits. It begins by explaining how a transistor can be used as a switch by applying voltage to its base terminal. It then discusses different types of multivibrators (astable, monostable, bistable) and provides examples of each, including explaining their circuit operation. The document also covers MOSFETs and how they can function as switches. It concludes by briefly describing the 555 timer integrated circuit and some of its applications and features.
This document discusses the analysis of HVDC converters, including line commutated converters (LCC) and voltage source converters (VSC). It covers the basic configuration of 3-phase Graetz bridges used in both LCC and VSC, and analyzes Graetz circuits with and without overlap between pulses. The document also discusses choice of converter configuration based on factors like pulse number, valve/switch selection, and converter ratings. Specifically, it examines 6-pulse and 12-pulse converters, and the characteristics of LCC using thyristors and VSC using IGBTs.
Power electronics devices operate at high power levels and require high efficiency compared to linear electronics. Some key power electronic devices include thyristors, IGBTs, MOSFETs, and integrated power circuits. Thyristors can be turned on through forward voltage triggering or gate triggering and turned off through natural commutation in AC circuits or forced commutation using resonant circuits, complementary devices, or external pulses. Proper protection of power devices includes using snubber circuits, overvoltage and overcurrent protection, and gate protection.
a mosquito repellent circuit to generate a frequency range between 20-38 kHz. As this particular frequency is known as ultra sound it distracts the female mosquitoes .To make this circuit we are using here IC-555 timer, variable resistor, capacitor and to generate this ultrasound frequency we are using piezzo buzzer.
There are two main types of AM modulation techniques: low-level modulation and high-level modulation. Low-level modulation occurs at low power levels prior to amplification using linear amplifiers, requiring less modulating power but being less efficient. High-level modulation occurs after amplification using nonlinear Class C amplifiers, requiring more modulating power but being more efficient. Common AM modulation circuits include linear, nonlinear, square law, balanced, and transistor modulators. Square law and switching modulators use diodes or transistors operated nonlinearly, producing the sum and difference frequencies that must be filtered using a tuned bandpass filter.
Power diodes are key components in rectifier circuits used in AC/DC converters. There are several types of power diodes including general purpose diodes, fast recovery diodes, and Schottky diodes. General purpose diodes have high reverse recovery times around 25μs and are used in low speed applications. Fast recovery diodes have very low reverse recovery times under 5μs and are used in switching circuits. Schottky diodes have the lowest forward voltage drop and recovery times in the nanosecond range but are limited to voltages below 100V. Key ratings for power diodes include peak inverse voltage, maximum average forward current, and reverse recovery time.
This document discusses uncontrolled rectifiers, which use diodes to convert alternating current (AC) to direct current (DC). It covers the operation and analysis of single-phase half-wave and full-wave rectifiers, as well as three-phase rectifiers, with both resistive and inductive loads. Key points covered include the output voltage and current calculations, effects of adding capacitors or inductors, and how source inductance can affect rectifier operation. The objectives are to understand different rectifier circuits and analyze their performance parameters.
Oscillators convert DC to AC signals using a feedback loop that sustains oscillations. Common oscillator circuits include LC, RC, quartz, and relaxation oscillators. The Hartley oscillator uses a tapped coil and capacitor in a feedback loop to generate radio frequencies. The Colpitts oscillator also uses an LC tank circuit but with capacitors in the feedback path. The Franklin oscillator uses two transistors and an LC circuit, with each transistor inverting the phase to sustain oscillations. The Wein bridge oscillator is an RC circuit that produces sine waves with high quality resonance and tuning capabilities. Oscillators are used to generate signals for applications like radio transmission, testing equipment, and sensors.
Power electronic converters use components like IGBTs to control and convert electric power for end users. A modular multilevel converter (MMC) is a power electronic converter topology that has several advantages over traditional converters. The MMC consists of submodules that each contain a half-bridge and capacitor. The submodules are arranged in an arm configuration with inductors to handle voltage differences and limit fault currents. Multicarrier pulse width modulation techniques are used to generate switching signals for the submodules to produce a stepped voltage waveform and perform power conversion while distributing energy across the capacitors.
This document provides instructions for building and testing a differentiator circuit using an op amp. Key points:
- The circuit uses an LM356 op amp instead of the diagrammed uA741. Resistors and capacitors can be combined to achieve desired values.
- A series resistor and feedback capacitor are added to the ideal differentiator circuit to form high-pass and low-pass filters, stabilizing the circuit and reducing noise.
- As frequency increases, the capacitor acts less like an open circuit and more like a short circuit. This changes the circuit's behavior from a differentiator to an inverting amplifier to an integrator.
- Phase shift between input and output will vary from 90°
This document discusses different types of field effect transistors (FETs), including their basic construction and operation. It provides details on junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs), as well as depletion and enhancement MOSFETs. The document also covers the drain and transfer characteristics of enhancement MOSFETs. Finally, it describes the working and applications of relaxation oscillators using unijunction transistors (UJTs), including their voltage-current characteristics and use in timing circuits.
This document provides an overview of bipolar junction transistors (BJT) including:
- The basic structure of an NPN or PNP transistor with emitter, base, and collector layers.
- How transistors operate in cutoff, saturation, and active modes depending on biasing of the PN junctions.
- How a small base current controls a larger collector current in the active region, allowing transistors to function as electronic switches or amplifiers.
The document discusses the application of transistors in mechatronic systems. It begins by explaining how bipolar junction transistors (BJTs) can be used as switches by amplifying or simply switching current on and off. It then covers various BJT connections like common base, common emitter, and common collector. The common emitter connection is discussed in detail, explaining how it works as an amplifier when a input voltage is applied to the base. Other topics covered include transistor switching characteristics, packages, darlington transistors, phototransistors, and field effect transistors like MOSFETs. Applications discussed include using a LED-phototransistor pair to detect object presence and measure angular position with a slotted disk.
This document provides an overview of transistors, including:
- A brief history of transistors from their invention at Bell Labs in 1947 to modern silicon-based designs.
- An explanation of how bipolar junction transistors (BJT) and field effect transistors (FET) work through doping and biasing of semiconductor materials.
- Descriptions of common transistor types like NPN and PNP BJTs, MOSFETs, JFETs, and their various operating regions and characteristics.
- Examples of transistor applications as switches, amplifiers, and in digital logic and power circuits.
This document provides an overview of various electronic components presented by Arnab Bhaumik. It discusses both active components like transistors and integrated circuits that require external power as well as passive components like resistors, capacitors, and transformers that cannot supply their own power. For each component, the document outlines their basic functionality and symbol. Diodes are described as only allowing current to flow in one direction, with types including PN junction, Zener, and LEDs. Transistors are categorized as bipolar or field-effect and are used to amplify signals. Transformers transfer energy between circuits through electromagnetic induction. Integrated circuits can contain millions of components on a single semiconductor chip.
This document discusses different types of multivibrators and unijunction transistors (UJTs). It describes astable, monostable, and bistable multivibrators. Astable multivibrators continuously switch between two states to produce a square wave without any input trigger. Monostable multivibrators have one stable state and switch to a transient state upon a trigger, then return to the stable state after a set time. Bistable multivibrators have two stable states and switch between them with an external trigger. The document also discusses UJTs, including their structure, characteristics, and use in relaxation oscillator circuits such as a light flasher.
The document discusses different types of multivibrators including astable, monostable, and bistable multivibrators. It provides details on the construction, operation, and output waveforms of each type. Astable multivibrators have no stable states and continuously oscillate between two states. Monostable multivibrators have one stable state and require a trigger pulse to change states. Bistable multivibrators have two stable states and require a trigger pulse to change between the states. Applications of each type are also discussed.
This document describes a top-down digital design flow using Synopsys Design Compiler for logic synthesis, Mentor Modelsim for simulation, and Cadence Encounter for placement and routing. It provides details on each step of the flow, from RTL design and simulation to logic synthesis, placement and routing, and back-annotation. An example FIR filter design is used to demonstrate the full flow. Guidelines are given for organizing design projects and files using scripts to automate the flow.
This document is the user manual for National Instruments' LabVIEW Sound and Vibration Toolkit. It describes how to use the toolkit's palettes for tasks like signal scaling, calibration, limit testing, weighting, integration, generation, analysis of vibration level, sound level, octaves, frequency, transients, and more. It also discusses the toolkit's front panel displays and included examples. The manual provides documentation on proper use and application of the toolkit.
This document provides an introduction to using ANSYS High Frequency Structure Simulator (HFSS). It discusses the fundamentals of HFSS including the finite element method it uses to solve Maxwell's equations numerically. It also covers important HFSS concepts such as boundaries, excitations, and the modeling graphical user interface. The document is intended to help new HFSS users understand the basic principles and capabilities of the software.
STUCK-OPEN FAULT ANALYSIS IN CMOS TRANSISTOR BASED COMBINATIONAL CIRCUITSMinh Anh Nguyen
This document discusses stuck-open faults in CMOS transistor-based combinational circuits. It begins by introducing defects that can occur during integrated circuit manufacturing. Stuck-open faults are identified as a major source of defects where an output may float to an intermediate value. The chapter then presents a CMOS implementation of a combinational circuit based on ESOP expressions that is robustly testable for detecting single stuck-open faults using a modified circuit with additional control inputs and an extra output. The document provides background on CMOS technology, MOSFET switches, and CMOS switching circuits before discussing faults that can occur in integrated circuits during fabrication.
This document provides an overview of electrocardiograms (ECGs) including what they are used for, how they work, and how to interpret the different parts of an ECG tracing. An ECG is a test that records the heart's electrical activity through electrodes placed on the skin. It can be used to diagnose heart conditions by examining features such as intervals, waves, rates, and voltages. A normal ECG shows distinct P, QRS, and T waves along with standardized intervals between them. Abnormalities in the tracing can indicate issues like arrhythmias, enlarged heart chambers, or poor blood flow.
The Maxwell 3D User's Guide provides an overview of the Maxwell 3D electromagnetic simulation software, including descriptions of the different solution types, the meshing process, data reporting capabilities, and examples of simulations for magnetostatic, eddy current, transient, and electric analyses. It also includes examples of using Maxwell for motor and multiphysics applications by coupling it with other ANSYS software packages.
Study of the release of heat by targeted gold nanoparticles exposed to RF fields. Study the physical properties of gold nanoparticles influence their RF thermal delivery which will aid in the further development of nanoscale materials for the treatment of cancer and various biomedical applications
Matlab code for comparing two microphone filesMinh Anh Nguyen
This MATLAB code analyzes two audio signals (.wav files) by:
1. Reading in the signals and extracting the right channel of each stereo recording.
2. Cutting the signals to the same length for comparison.
3. Calculating the fast Fourier transform (FFT) and plotting the power spectra of the cut signals.
4. Comparing the signals by calculating the mean squared error (MSE) and determining if they are the same or not based on a threshold.
The document summarizes the evaluation of an audio detection system prototype for identifying misloading issues in a centrifuge. Testing showed the prototype had a 93% sensitivity, 100% specificity, and 94% accuracy in detecting when bearings were loaded incorrectly based on analyzing audio signals. Future work is suggested to integrate the prototype with motor control and position sensing to automatically detect and address any misloading issues in the centrifuge.
This document contains the lyrics to the song "Love Me Tender" by Elvis Presley. Over the course of the song, the singer expresses his enduring love for his darling and asks her to love him tenderly, truly, and for a long time as all his dreams are fulfilled through their love. He pledges that he will always love her.
The document discusses the NI myRio and its capabilities for reading image and audio files. The NI myRio can read PNG, JPEG, and BMP image formats. It can only read audio in WAV format. PNG is best for images with sharp edges or no gradients, while JPEG is better for photos with gradients. BMP has both indexed and direct color depths but results in large file sizes. Microphones convert sound waves to electrical signals, with different types using various methods, and stereo microphones capture two channels of sound for left and right arrival times.
Results Review of iphone and Detecting of Human Errors AlgorithmMinh Anh Nguyen
The document provides a review and results from experiments comparing audio files using Matlab and Labview algorithms to detect differences between identical and non-identical files. It outlines tasks from a previous meeting and issues encountered integrating audio analysis tools into the NI myRio software. Matlab results are presented comparing various audio file pairs that are both identical and non-identical, detecting differences between the files. Preliminary Labview results are also shown comparing one pair of non-identical audio files.
Results Review of Microphone Prototype and LabView Detecting of Human Errors ...Minh Anh Nguyen
The document summarizes tests of a microphone prototype and LabView algorithms for detecting human errors. It outlines tasks from a previous meeting, describes the microphone prototype, and reports on LabView results analyzing audio files to detect differences between files representing correct and incorrect settings. Tests were conducted in simulation mode to verify files were loaded correctly and differences detected between non-identical images and audio files. Results are presented for various component errors detected by analyzing changes in audio signals.
The document analyzes a method for comparing two audio files to detect human errors using fast Fourier transforms (FFT). It describes using FFT to convert audio files from the time domain to the frequency domain. It then calculates the mean squared error (MSE) between the normalized spectral densities of the two files. A low MSE would indicate the files are identical, while a higher MSE shows a difference. The document provides the steps and flowchart used, and includes examples of Matlab and Labview code implementing the comparison method on identical and non-identical audio files.
The document analyzes a method for detecting human errors in image files by comparing histograms of two images. It discusses using histograms to visualize pixel intensity distributions and compare overall contrast and dynamic range. The method involves reading and resizing two images, calculating their histograms, and checking for differences to detect errors. Matlab and Labview code examples demonstrate comparing histogram plots and pixel counts to determine if two images match or not. Test results show the histogram method can effectively detect errors by identifying mismatches between images.
The document discusses the benefits of exercise for mental health. Regular physical activity can help reduce anxiety and depression and improve mood and cognitive functioning. Exercise boosts blood flow, releases endorphins, and promotes changes in the brain which help enhance one's emotional well-being and mental clarity.
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2. Outline
• Introduction
• Basic building blocks
(OTAS, Capacitor,Switches and non-overlapping).
• Basic operation and analysis
(resistor equivalence of switched capacitor filters and
integrators).
• Definition of switched-capacitor filters.
• Basics circuit for Switched-capacitor filters
• Disadvantage & advantage of switched-capacitor filters.
• Compared switched-capacitor filter circuit with other
circuit
• Summary and reference of switched-capacitor filters
3. Introduction
• There are three main types filters, in integrated analog
filters.
1. Switched capacitor filter (SC filter)
-resistor replaced by switch capacitor
-sample time but analog values
2. R-C filter
-“Standard” active filter RC and Opamp with feed
back
-Resistor often implemented with MOS, so called
MOSFET C filter
3.gm-C filter
-resistors replaced by trans-conductor used open loop
-two latter types are continuous time filter
4. Historical background
• Due to the difficulty in making fully integrated
resistors the active RC filters were not able to
fabrication in monolithic form on one silicon chip.
• Switched capacitor filters characterized in the z
domain were developed late 70s and earlier 80s.
• The origin of SC principle was first report by
Maxwell around 1873.
• The first book fully dedicated to switches
capacitor was published in 1948 by P.E.Allen and
E.SanchezSinenico “Switches capacitor circuit”
Van Nostrand Reinhold,NY,1984.
5. Basic building blocks
• The ideal operational amplifier is a voltagecontrolled voltage source with:
• Infinite gain and input impedance
• Zero output impedance.
• Vo=A(Vi)
6. Basic Building Block of OTAS
• Often realized as single-stage load compensated
OTAs since the load is purely capacitive.
• Low dc gain affect the accuracy of the transfer
function
• The unity-gain frequency should be at least five
time higher than the clock frequency.
• Dc offset can result in high output dc offset
depending on the topology chosen. The techniques
exist that can significantly reduce this offset and at
the same time reduce 1/f noise.
• Not so low output impedance
• Still used as voltage amplifier
8. Building block of capacitors
• Double poly capacitors
• A highly linear capacitance is usually constructed
between two poly-silicon layers
• Substantial parasitic with large bottom plate
capacitor (20% of C1)
• Metal-metal capacitors are used but have even
large parasitic capacitances
9. Building block of switches
• MOSFET switches are good switches
• Should have as high off resistance Roff as possible.
At T=300K, MOS switches have Roff on the order of giga
ohms. The finite value is caused by finite leakage currents
that is typically dominated by reverse biased diodes.
• Should have as low on resistance Ron as possible.
Ron can be made arbitrarily small by increasing the width
of the transistors. But parasitic capacitance and leakage
current increase with increasing width.
• MOS switches does not introduce any offset
• BJT switches does introduce offset
10. MOS Switches
• Nonlinear capacitance on each side of the
switch.
• Charge injection effects
• Capacitive coupling from the logic signal to
each side of the switch.
11. Charge injection
• An additional charge, coming from the MOS
channel when the switch is turn off, stored on the
CL
• Charge store in the channel when switch is on.
• Direct coupling capacitance Cgd. (Mainly to
overlap capacitance Cgdov).
• When phase1 switches charge injection into Vi
and Vo
12. Charge injection
• Input node vi is typical low impedance node
• When phase1 switched high(off-on) charge
injected into Vi and Vo node collected by input
impedance (in this phase the output require follow
the input voltage Vi)
• When phase1 switched low(on-off) charge
injected into Vi
13. Charge injection (Const.)
• For nMOS charge during the on state
• Charge stored in the channel
Qch
CoxWL VDD
(
Vt h
Vi)
charge due to overlap capacitance Vi
Qgsov
Cgsov ( VDD
Vi)
Qgdov
Cgdov ( VDD
Vo
Vi)
• Charge during the off state;
Qch
0
charge due to overlap capacitance Vi
Qgsov
Cgsov ( VDD
Vi)
Qgdov
Cgdov ( VDD
Vi)
Vo
14. Non-overlapping clocks
• To guarantee that charge is not lost in SC
circuits, non overlapping clocks are used.
• Both clocks are never on at the same time.
• Integer values occur at end of phase 1
• End of phase2 is ½ off integer value
15. Resistor equivalence to a switched
capacitor
• The capacitor is the
“switched capacitor”
• Non-overlapping clocks
phase1 and phase2
controlled M1and M2,
respectively.
• Vi is the sample at
falling edge of phase1
• And sample frequency is f
16. Resistor equivalence to a switched
capacitor (Const.)
• The charge transferred from V1 to V2 is Q C( V1
• The average current flow from V1 to V2 is
Ieq
• With the current flow
through the switch
capacitor resistor
proportional to the
voltage across it,
the equivalent “switch
capacitor resistance is
V2)
Q
T
17. Resistor equivalence to a switched
capacitor (Const.)
T
Ieq
1
f
Q
T
Q
C V1
C V2
T
T
Q
C ( V1
T
T
Q
V2)
C V1
C V2
1
T
f
Q
C ( V1
V2) f
T
Ieq
Req
Req
C ( V1
V
V2) f
where
V
V1
V2
Ieq
V1
C ( V1
V2
V2) f
Req
1
C f
18. Resistor equivalence example
What is the equivalent resistance of 10nF capac itance sample at a clock
f requency of 100kHz.
Req
1
Cf
1
Req
1 10
Req
1
9
3
100 10
4
10
• This equivalence is very large
• Requires only 2 transistors, a clock and relatively small
capacitance
• In a CMOS process, large resistor would normally require
a huge amount of silicon area
19. What is Switched capacitor
filter?
• The switched capacitor filter is technique based on
the realization that a capacitor switched between
two circuit nodes at a sufficiently high rate is
equivalent to a resistor connecting these two
nodes.
• Used a miller integrator circuit, replaces the input
resistor by a ground capacitor together with two
MOS transistors acting as switches.
• The switches are driven by a non-overlapping two
phase clock.
• SC filters operate on the principle of transferring
analog signal samples ( represented as charges on
capacitors) from one storage element to another
20. Switched capacitor filter
• Let built an SC filter
• We’ll start with a
simple miller integrate
circuit
• Replaced the physical
resistor by an
equivalent SC resistor.
23. RC active filters
• Calculated the transferred function for RC active
filters
( V2
Vi)
R
C2
dVo
Vi
dt
R C2
Vo
Vi
(s )
1
R C2
d
dt
( V2
Vo )
0
24. SC filters (non-inverting)
• During phase1(S1 on,S2 off)
• C1 charge up to the current of vi
• During phase2(S1 off, S2 on)
Discharge into C2 or A charge packet C1Vi is
remove from C2
25. SC filters
• Calculated the transferred function for SC filter
( V2
0
Vi)
C2
Req
dVo
dt
Vi
dt
d
Req C2
1
Req
Vo
Vi
C1 f
(s )
1
1
C1 f
Vo
Vi
(s )
C2 s
C1 f
C2 s
( V2
Vo )
26. SC filters (inverting)
• Phase1:S1 on, S2 off
Vi is store in C1, S1 is driven by Vi, S2 is
maintained at 0, by the virtual ground.
• Phase2: S1 off, S2 on
Vi is disconnected, C1 is complete discharge for the
next cycle.
27. SC filters (inverting)
• Calculated the transfer function
( V2
0
Vi)
C2
Req
dVo
dt
Vi
dt
d
Req C2
1
Req
Vo
Vi
C1 f
(s )
1
1
C1 f
Vo
Vi
(s )
C2 s
C1 f
C2 s
( V2
Vo )
28. Gm-C filter
• An ideal transconductor is described by the
following expression
io
Gm Vi
The ouput voltage of the integrator is
Vo
Vo
Io
sC1
Gm Vi
sC1
Vo
Gm
Vi
sC1
H( s )
Gm
C1
29. First order low pass filter
• Calculated the transfer function
Zf
H( s )
Zi
1
R2
H( s )
H( s )
K
w
H( s )
S C2
R1
K
w
s
w
R2
R1
1
R2 C2
1
R1 C2( s R2 C2
1)
30. First order high pas filters
• Calculated the transfer function
Zf
H( s )
Zi
R2
H( s )
1
R1
H( s )
K
w
H( s )
K
sC1
s
s
w
R2
R1
1
R1 C1
R2 s
R1( s R1 C1
1)
31. Comparison
• This is the table compare the transfer function for
some of the filter
32. SC filter Noise
• The resistance of switch M1 produce a noise
voltage on C with variance kT/C
2
2
Q
C
• The corresponding noise charge is
2
Q
2
V
KT C
• This charge is sample when M1 is open
• The resistance of switch M2 contribute to an
uncorrelated noise charge C at the end of phase 2
• The mean square of charge transfer from v1 to v2
each sample period is
•
2
Q
2KT C
33. SC filters noise (const.)
• The mean square noise current M1 and M2 KT/C
2
2 2
noise is
I
Q f
2
I
2 KT C f
2
• The noise spectrum are single sided by
convention, the distributed between 0 and f/2.The
spectra density noise is
2
I
2 KT C f
2
f
f
4 KT C f
f
2
C f
Req f
2
2
1
1
C
2
I
Req
I
f
4K T
Req
• The noise from an SC resistor is equal to the noise
of physical resistor
35. Advantage
•
•
•
•
•
Reduction of power consumption for filters IC
High integration density
Area(switches + capacitor) << area resistor
Switch capacitor integrator
R is replaced by C and 2 switched (MOS
transistor)
36. Disadvantage
• Sample data effect (noise)
• Need clock circuit and anti-aliasing filters
• Not suited for high frequency
37. Why Switched-capacitors(SC)
circuits?
• Resistors occupy inordently large amount of area
in integrated circuits
• AC resistors can be simulated by periodically
switching a capacitor between slow varying
voltages
• Area(switches + capacitor)<< Area resistor
38. Application of SC filter
• Over sampled A/D and D/A converter
• Analog front-end (CDs)
• Stand alone filter (eg. National Semiconductor
LMF100)
• Replaced by ADC and DSP in many cases
39. Summary
• A miller integrator
• Replaces the input resistor R by a ground capacitor C
together with two MOS transistors acting as switches.
• The switches are driven by a non-overlapping two phase
clock
• Pole and zero frequencies proportional to sample
frequency and capacitor ratios
• Bandwidth required less than the continuous time filter
• “analog” sample data filters
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